公开(公告)号：AU1797876A

公开(公告)日：1978-04-06

申请号：AU1797876

申请日：1976-09-21

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  G03C1/72 ,  C08F8/30 ,  C08J7/12

Abstract: A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：CA1072243A

公开(公告)日：1980-02-19

申请号：CA261430

申请日：1976-09-17

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  C08F20/52 ,  G03C1/495 ,  B41M3/08

Abstract: POSITIVE RESISTS CONTAINING DIMETHYLGLUTARIMIDE UNITS A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：CH600393A5

公开(公告)日：1978-06-15

申请号：CH1174076

申请日：1976-09-16

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  G03F7/02

Abstract: A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：FR2325077A1

公开(公告)日：1977-04-15

申请号：FR7623080

申请日：1976-07-20

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  G03C1/495 ,  H01L21/312 ,  H05K3/06

Abstract: A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：DE2641624A1

公开(公告)日：1977-03-24

申请号：DE2641624

申请日：1976-09-16

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  G03F7/10

Abstract: A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：DE3268140D1

公开(公告)日：1986-02-06

申请号：DE3268140

申请日：1982-09-08

Applicant: IBM

Inventor： BARGON JOACHIM ,  HIRAOKA HIROYUKI ,  WELSH LAWRENCE WILLIAM

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/312

Abstract: A photoresist that has strong resistance to reactive ion etching, high photosensitivity to mid- and deep UV-light, and high resolution capability is formed by using as the resist material a copolymer of methacrylonitrile and methacrylic acid, and by baking the resist before the exposure to light for improved photosensitivity, and after exposure to light, development, and prior to treatment with reactive ion etching.