公开(公告)号：US3647656A

公开(公告)日：1972-03-07

申请号：US3647656D

申请日：1969-04-09

Applicant: IBM

Inventor： SRINIVASAN RANGASWAMY ,  HIRAOKA HIROYUKI

IPC: C07D315/00 ,  B01J1/10

CPC classification number: C07D315/00 ,  Y10S204/90

Abstract: 2-(O=),3-R-2,3-DIHYDROFURAN

ALPHA SUBSTITUTED B,$ UNSATURATED LACTONES HAVING THE GENERAL FORMULA

WHERE R IS AN ALKYL OR AROMATIC GROUP, IS PREPARED. AN ALKYL OR AROMATIC SUBSTITUTED ALKOXYFURAN IS IRRADIATED IN THE PRESENCE OF ACTINIC RADIATION EITHER IN THE VAPOR PHASE OF IN SOLUTION.

公开(公告)号：DE3780732D1

公开(公告)日：1992-09-03

申请号：DE3780732

申请日：1987-08-25

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: G03C1/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/11 ,  H01L21/027

公开(公告)号：DE3779237D1

公开(公告)日：1992-06-25

申请号：DE3779237

申请日：1987-06-16

Applicant: IBM

Inventor： HIRAOKA HIROYUKI ,  LABADIE JEFFREY WILLIAM ,  LEE JAMES HSI-TANG ,  MACDONALD SCOTT ARTHUR ,  WILLSON CARLTON GRANT

IPC: H01L21/302 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3065 ,  G03F7/26

Abstract: The reactive ion etching and thermal flow resistance of a resist image is enhanced by contacting the resist image with an alkyl metal compound of magnesium or aluminium.

公开(公告)号：DE3268140D1

公开(公告)日：1986-02-06

申请号：DE3268140

申请日：1982-09-08

Applicant: IBM

Inventor： BARGON JOACHIM ,  HIRAOKA HIROYUKI ,  WELSH LAWRENCE WILLIAM

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/312

Abstract: A photoresist that has strong resistance to reactive ion etching, high photosensitivity to mid- and deep UV-light, and high resolution capability is formed by using as the resist material a copolymer of methacrylonitrile and methacrylic acid, and by baking the resist before the exposure to light for improved photosensitivity, and after exposure to light, development, and prior to treatment with reactive ion etching.

公开(公告)号：DE2327503A1

公开(公告)日：1974-01-10

申请号：DE2327503

申请日：1973-05-30

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: C07C49/39 ,  B01J19/12 ,  C07C45/00 ,  C07C45/60 ,  C07C49/395 ,  C07C49/443 ,  C07C67/00 ,  C07C49/27

Abstract: 1398676 Preparation of cyclobutanones from glutaric anhydrides INTERNATIONAL BUSINESS MACHINES CORP 14 May 1973 [12 June 1972] 22758/73 Heading C2C The invention comprises a process for the production of a cyclobutanone in which a substituted or unsubstituted glutaric anhydride is subjected to irradiation with ultra violet light in the vapour phase at a temperature within the range from 120‹ to 300‹ C.

公开(公告)号：DE3888955D1

公开(公告)日：1994-05-11

申请号：DE3888955

申请日：1988-11-23

Applicant: IBM

Inventor： DICKSTEIN HEIDI LEE ,  HIRAOKA HIROYUKI ,  LEE JAMES HSI-TANG

IPC: G11B5/17 ,  G11B5/31

Abstract: The electrical insulation (22) surrounding the conductive coil (20) in a thin film magnetic head (11) comprises a photosensitive resin which has been crosslinked by a thermally activated crosslinking agent or promotor. The addition of the thermally activated crosslinking agent or promotor greatly reduces both the cure temperature and cure time and results in enhanced dimensional stability without any deleterious effects.

公开(公告)号：CA1309177C

公开(公告)日：1992-10-20

申请号：CA580325

申请日：1988-10-17

Applicant: IBM

Inventor： DICKSTEIN HEIDI L ,  HIRAOKA HIROYUKI ,  LEE JAMES H-T

IPC: G11B5/17 ,  G11B5/31

Abstract: of the Invention THIN FILM MAGNETIC HEADS WITH THERMALLY CROSSLINKED INSULATION A thin film magnetic head is provided in which the electrical insulation surrounding the conductive coil comprises a photosensitive resin which has been crosslinked by a thermally activated crosslinking agent or promotor. The addition of the thermally activated crosslinking agent or promotor greatly reduces both the cure temperature and cure time and results in enhanced dimensional stability without any deleterious effects. SA9 87 056X

公开(公告)号：DE3481939D1

公开(公告)日：1990-05-17

申请号：DE3481939

申请日：1984-10-31

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: H01L21/027 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20 ,  G03F7/26 ,  G03F7/30 ,  H01L21/30 ,  H01L21/311 ,  G03F7/11 ,  G03F7/36

Abstract: A positive tone micro pattern is formed by a dry process in which a substrate is first coated with an organic polymer film and then with a film of an oxygen etch barrier. The oxygen etch barrier film is exposed to a low energy proton beam in a patternwise manner, and the pattern is developed by means of oxygen reactive ion etching.

公开(公告)号：DE2642269A1

公开(公告)日：1977-03-31

申请号：DE2642269

申请日：1976-09-21

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: C08F8/00 ,  C08F8/30 ,  G03F7/039 ,  H01L21/027 ,  G03F7/10

Abstract: Positive resists are made using polymers and copolymers of methacrylic acid, methacrylic anhydride, methyl methacrylate, methacrylimide, and N-alkyl-methacrylimides which have been nitrated in up to about 10% of the monomer units on the methyl groups branching off the polymer chain. Inclusion of the nitro groups results in an increase of over an order of magnitude in the speed of development of images when the polymers are used as positive resists.

公开(公告)号：DE2641624A1

公开(公告)日：1977-03-24

申请号：DE2641624

申请日：1976-09-16

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  G03F7/10

Abstract: A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.