公开(公告)号：JPH1131797A

公开(公告)日：1999-02-02

申请号：JP15505798

申请日：1998-06-03

Applicant: IBM

Inventor： MARK C HEIKY ,  DAVID V HORAK ,  MANDELMAN JACK A ,  WENDEL P NOBLE

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To obtain a built-in strap structure which makes a device transfer gate longer in length by the use of a smaller cell region by a method wherein the inside of a storage trench is connected to the rear of an array transfer device, and the strap is arranged in a region which is used only for isolation. SOLUTION: An empty region inside a shallow trench isolation region 82 for a built-in strap which avoids a deep trench collar is used. The layout of a built-in strap indicated by an arrow 80 is carried out in a shallow trench isolation region 82. A space inside a transfer gate 84 between deep trenches 86 is not affected by the built-in strap. By this setup, a built-in strap structure which gives a longer device transfer gate length by the use of a smaller cell region can be obtained.