公开(公告)号：SG85156A1

公开(公告)日：2001-12-19

申请号：SG1999006334

申请日：1999-12-10

Applicant: IBM

Inventor： ATUL AJMERA ,  EFFENDI LEOBANDUNG ,  WERNER RAUSCH ,  DOMINIC J SCHEPIS ,  GHAVAM G SHAHIDI

IPC: H01L27/12 ,  H01L21/74 ,  H01L21/76 ,  H01L21/762 ,  H01L23/52 ,  H01L23/58 ,  H01L29/786

Abstract: A method for forming a substrate contact in a substrate that includes a silicon on insulator region. A shallow isolation trench is formed in the silicon on insulator substrate. The shallow isolation trench is filled. Photoresist is deposited on the substrate. A contact trench is formed in the substrate through the filled shallow isolation trench, silicon on insulator, and silicon substrate underlying the silicon on insulator region. The contact trench is filled, wherein the material filling the contact trench forms a contact to the silicon substrate.