公开(公告)号：GB2486601C

公开(公告)日：2013-11-27

申请号：GB201203113

申请日：2010-08-25

Applicant: IBM

Inventor： LI YING ,  NARASIMHA SHREESH ,  WERNER RAUSCH A

IPC: H01L29/66 ,  H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78

Abstract: Disclosed is an SOI device on a bulk silicon layer which has an FET region, a body contact region and an STI region. The FET region is made of an SOI layer and an overlying gate. The STI region includes a first STI layer separating the SOI device from an adjacent SOI device. The body contact region includes an extension of the SOI layer, a second STI layer on the extension and a body contact in contact with the extension. The first and second STI layers are contiguous and of different thicknesses so as to form a split level STI.