公开(公告)号：DE3268802D1

公开(公告)日：1986-03-13

申请号：DE3268802

申请日：1982-07-13

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： KLEIN WILFRIED DIPL ING ,  KLINK ERICH DIPL ING ,  NAJMANN KNUT DIPL ING ,  WERNICKE FRIEDRICH DIPL ING

IPC: H03K3/286 ,  H03K3/287 ,  H03K19/20

Abstract: Disclosed is a phase splitter with integrated latch circuit, where the complementary output signals generated after an input signal applied to a true-complement generator are available directly without any load by the latch circuit, where upon a premature change of the input signal there is no undesired change of the previously set switching state or of the output signals, respectively, and where a simple clocking for functional control can be used. The advantages presented by the disclosed Phase splitter substantially consist in that the speed with which the complementary output signals are supplied is extremely high since the output signals are available directly, i.e. with only one stage delay, the latch circuit being non-conductive in the stationary state, and thus in a latching process does not have to be switched from one stage to the other, but only switched on.

公开(公告)号：DE2733615A1

公开(公告)日：1979-02-01

申请号：DE2733615

申请日：1977-07-26

Applicant: IBM DEUTSCHLAND

Inventor： KLEIN WILFRIED ,  KLINK ERICH DIPL ING ,  RUDOLPH VOLKER DIPL PHYS DR ,  WERNICKE FRIEDRICH DIPL ING

IPC: G11C11/41 ,  G11C11/40 ,  G11C11/414 ,  G11C11/416 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/04 ,  H01L27/06 ,  H01L27/07 ,  H01L29/47 ,  H01L29/872 ,  G11C11/36 ,  G11C7/00

Abstract: The highly integrated semiconductor device is intended as a separating diode cooperating with selector lines of an integrated memory. The resistor (R) is of pinch-type whose pinch doping region (5) is greater than the cross sectional dimension of the resistor doping region (4). Simultaneously it forms a cathode connection doping region for the Schottky diode (D). Preferably the pinched doping region carries a connection contact (K) for the Schottky diode cathode terminal. This doped region is of identical conductivity as the surrounding semiconductor material (3), but of higher doping rate, sufficient to form an ohmic contact with a metal electrode on the region. On the resistance region (4) outside the pinch doping region is provided a metal contact (A), extending beyond the resistance region. -

公开(公告)号：DE2951945A1

公开(公告)日：1981-07-02

申请号：DE2951945

申请日：1979-12-22

Applicant: IBM DEUTSCHLAND

Inventor： BROSCH RUDOLF DIPL ING DR ,  HEIMEIER HELMUT DIPL ING DR ,  KLEIN WILFRIED ,  WERNICKE FRIEDRICH DIPL ING

IPC: G11C11/41 ,  G11C11/40 ,  G11C11/411 ,  G11C11/416 ,  G11C7/06

Abstract: After a controlled strong lowering of the word line potential for the purpose of addressing a cell, said potential is immediately recharged simultaneously increasing the potential on the N side of the two PNP injectors of the cell and causing the injector capacitances of the selected storage cells and the bit line capacitances to form a capacitive voltage divider, so that the bit lines connected thereto are recharged to different degrees by the different magnitudes of the injector capacitances. Thus, the differential signal formed on the bit lines is noticeably amplified by the supply of currents of different magnitudes.

公开(公告)号：DE2860462D1

公开(公告)日：1981-03-26

申请号：DE2860462

申请日：1978-06-19

Applicant: IBM

Inventor： KLEIN WILFRIED ,  KLINK ERICH DIPL ING ,  RUDOLPH VOLKER DIPL PHYS ,  WERNICKE FRIEDRICH DIPL ING

IPC: G11C11/41 ,  G11C11/40 ,  G11C11/414 ,  G11C11/416 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/04 ,  H01L27/06 ,  H01L27/07 ,  H01L29/47 ,  H01L29/872

Abstract: The highly integrated semiconductor device is intended as a separating diode cooperating with selector lines of an integrated memory. The resistor (R) is of pinch-type whose pinch doping region (5) is greater than the cross sectional dimension of the resistor doping region (4). Simultaneously it forms a cathode connection doping region for the Schottky diode (D). Preferably the pinched doping region carries a connection contact (K) for the Schottky diode cathode terminal. This doped region is of identical conductivity as the surrounding semiconductor material (3), but of higher doping rate, sufficient to form an ohmic contact with a metal electrode on the region. On the resistance region (4) outside the pinch doping region is provided a metal contact (A), extending beyond the resistance region. -