公开(公告)号：JP2001015464A

公开(公告)日：2001-01-19

申请号：JP2000131737

申请日：2000-04-28

Applicant: IBM

Inventor： WILLIAM J COLE ,  EDELSTEIN DANIEL C ,  NAPHTALI E LASTIG

IPC: B24B37/00 ,  C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  C23F3/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To obtain a CMP process which increases the removing speed of a liner for copper metallurgy composed of a metal having a high melting point, its alloy or compound, or both the metal and alloy or compound and, at the same time, can minimize the formation of recesses and erosion by removing the liner with slurry containing an oxidizing agent, a corrosion inhibitor, and a surface active agent. SOLUTION: The polishing speeds of a liner 20 and an insulator 10 are controlled so as to make the speeds faster than the polishing speed of copper 22. Namely, in order to make the condition for removing a Ta/TaN liner composed mainly of Ta from a semiconductor substrate which is passivated with silicon dioxide, the liner 20 is removed by CIVIP in acidic slurry containing an oxidizing agent, such as the hydrogen peroxide, a corrosion inhibitor, such as the demineralized water, BTA, etc., and a surface active agent, such as the Duponol SP, etc. Consequently, a CMP process which can increase the removing speed of the liner and, at the same time, can minimize the formation of recesses and erosion can be obtained.