FLOATING-POINT COMPUTATION WITH THRESHOLD PREDICTION FOR ARTIFICIAL INTELLIGENCE SYSTEM

    公开(公告)号:AU2021382976A9

    公开(公告)日:2025-01-09

    申请号:AU2021382976

    申请日:2021-11-02

    Applicant: IBM

    Abstract: A system comprises a floating-point computation unit configured to perform a dot-product operation in accordance with a first floating-point value and a second floating-point value, and detection logic operatively coupled to the floating-point computation unit. The detection logic is configured to compute a difference between fixed-point summations of exponent parts of the first floating-point value and the second floating-point value and, based on the computed difference, detect the presence of a condition prior to completion of the dot-product operation by the floating-point computation unit. In response to detection of the presence of the condition, the detection logic is further configured to cause the floating-point computation unit to avoid performing a subset of computations otherwise performed as part of the dot-product operation. Such techniques serve as a predictor that the avoided subset of computations would have resulted in a dot product of the two floating-point values being below a threshold value.

    Differential mixed signal multiplier with three capacitors

    公开(公告)号:AU2021254857A1

    公开(公告)日:2022-08-04

    申请号:AU2021254857

    申请日:2021-03-01

    Applicant: IBM

    Abstract: A differential mixed-signal logic processor is provided.The differential mixed-signal logic processor includes a plurality of mixed-signal multiplier branches for multiplication of an analog value A and a N-bit digital value B.Each of plurality of mixed-signal multiplier branches include a first capacitor connected across a second capacitor and a third capacitor to provide a differential output across the second and third capacitors.A capacitance of the first capacitor is equal to half a capacitance of the second and third capacitors.

    MTJ stack containing top magnetic pinned layer having strong perpendicular magnetic anisotropy

    公开(公告)号:AU2021217208A1

    公开(公告)日:2022-07-07

    申请号:AU2021217208

    申请日:2021-01-14

    Applicant: IBM

    Abstract: A top pinned magnetic tunnel junction (MTJ) stack containing a magnetic pinned layered structure including a second magnetic pinned layer having strong perpendicular magnetic anisotropy (PMA) is provided. The magnetic pinned layered structure includes a crystal grain growth controlling layer located between a first magnetic pinned layer having a body centered cubic (BCC) texture and the second magnetic pinned layer. The presence of the crystal grain growth controlling layer facilitates formation of a second magnetic pinned layer having a face centered cubic (FCC) texture or a hexagonal closed packing (HCP) texture which, in turn, promotes strong PMA to the second magnetic pinned layer of the magnetic pinned layered structure.

    MTJ-STAPEL, DER EINE OBERE GEPINNTE MAGNETISCHE SCHICHT MIT STARKER SENKRECHTER MAGNETISCHER ANISOTROPIE ENTHÄLT

    公开(公告)号:DE112021000241T5

    公开(公告)日:2022-09-08

    申请号:DE112021000241

    申请日:2021-01-14

    Applicant: IBM

    Abstract: Es wird ein oben gepinnter Magnettunnelübergangs-Stapel (MTJ-Stapel) bereitgestellt, welcher eine gepinnte magnetische Schichtstruktur enthält, die eine zweite gepinnte magnetische Schicht umfasst, die eine starke senkrechte magnetische Anisotropie (PMA) aufweist. Die gepinnte magnetische Schichtstruktur umfasst eine Kristallkornwachstums-Steuerschicht, welche zwischen einer ersten gepinnten magnetischen Schicht, die eine kubisch-raumzentrierte Struktur (BCC-Struktur) aufweist, und der zweiten gepinnten magnetischen Schicht angeordnet ist. Das Vorliegen der Kristallkornwachstums-Steuerschicht erleichtert die Bildung einer zweiten gepinnten magnetischen Schicht, welche eine kubisch-flächenzentrierte Struktur (FCC-Struktur) oder eine Struktur einer hexagonal dichtesten Kugelpackung (HCP-Struktur) aufweist, was wiederum eine starke PMA der zweiten gepinnten magnetischen Schicht der gepinnten magnetischen Schichtstruktur fördert.

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