公开(公告)号：US3760242A

公开(公告)日：1973-09-18

申请号：US3760242D

申请日：1972-03-06

Applicant: IBM

Inventor： WU B ,  DUFFY M ,  RISEMAN J

IPC: H01L21/316 ,  H01L23/29 ,  H01L23/485 ,  H01L3/10 ,  H01L3/00

CPC classification number: H01L23/291 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/31612 ,  H01L23/29 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure with a metallic oxide coated surface, a silicon nitride coating on the metal oxide and a covering coating of glass over the coated surface.

Abstract translation: 具有金属氧化物涂覆表面的半导体结构，金属氧化物上的氮化硅涂层和涂覆表面上的玻璃覆盖涂层。