公开(公告)号：CA1251680A

公开(公告)日：1989-03-28

申请号：CA495659

申请日：1985-11-19

Applicant: IBM

Inventor： CHIONG KAOLIN N ,  YANG BEA-JANE L ,  YANG JER-MING

IPC: H01L21/302 ,  G03F7/26 ,  H01L21/3065

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.