公开(公告)号：JPS62135824A

公开(公告)日：1987-06-18

申请号：JP25714886

申请日：1986-10-30

Applicant: IBM

Inventor： MOREAU WAYNE M ,  CHIONG KAOLIN N ,  CHOW MING-FEA ,  SNYDER NANCY W

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/022 ,  G03F7/023 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

公开(公告)号：DE3773061D1

公开(公告)日：1991-10-24

申请号：DE3773061

申请日：1987-06-26

Applicant: IBM

Inventor： ALLEN ROBERT DAVID ,  CHIONG KAOLIN N ,  CHOW MING-FEA ,  MACDONALD SCOTT ARTHUR ,  YANG JER-MING ,  WILLSON CARLTON GRANT

IPC: H01L21/027 ,  G03F7/038 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38

Abstract: The present invention is concerned with a method of converting a single resist layer into a multilayered resist. The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

公开(公告)号：CA1267378A

公开(公告)日：1990-04-03

申请号：CA495093

申请日：1985-11-12

Applicant: IBM

Inventor： CHIONG KAOLIN N ,  CHOW MING-FEA ,  YANG JER-MING

IPC: G03F7/36 ,  G03C1/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26

Abstract: FI9-64-046 TOP IMAGED PLASMA DEVELOPABLE RESISTS The present invention is concerned with a method of converting the upper portion of a layer of polymeric resist into a dry etch resistant form. Oxygen plasma can then be used to develop the entire resist structure. The layer of polymeric resist is exposed to patterned radiation which creates labile and reactive hydrogens within the resist by molecular rearrangement. The reactive hydrogens within the upper portion of the layer are subsequently reacted with a silylating reagent to form a dry etch resistant compound. When the polymeric resist material is highly absorbent of the radiation, the reactive hydrogens are created only in the upper portion of the layer; when the polymeric resist material is more transparent, the formation of the dry etch resistant upper portion must be controlled via the degree of penetration of the silylating reagent into the layer.

公开(公告)号：CA1251680A

公开(公告)日：1989-03-28

申请号：CA495659

申请日：1985-11-19

Applicant: IBM

Inventor： CHIONG KAOLIN N ,  YANG BEA-JANE L ,  YANG JER-MING

IPC: H01L21/302 ,  G03F7/26 ,  H01L21/3065

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.