公开(公告)号：DE3689179D1

公开(公告)日：1993-11-25

申请号：DE3689179

申请日：1986-05-27

Applicant: IBM

Inventor： CHIONG KAOLIN ,  YANG BEA-JANE LIN ,  YANG JER-MING

IPC: H01L21/302 ,  G03F7/26 ,  H01L21/3065

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.

公开(公告)号：DE3764032D1

公开(公告)日：1990-09-06

申请号：DE3764032

申请日：1987-05-22

Applicant: IBM

Inventor： LIN BURN JENG ,  YANG BEA-JANE LIN ,  YANG JER-MING

IPC: G03F1/00 ,  G03F1/08 ,  G03F7/11 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30

Abstract: The patterned image includes on a substrate, a patterned image of a first resist material and patterned image of a second and different resist material on said first resist material. Said first material contains reactive hydrogen functional groups. The surface layer of the delineated and uncovered first resist material is reacted with a multifunctional organometallic material containing functional groups that are reactive with the functional groups of said first material. The method comprises: providing a first resist material on a substrate wherein said first material contains reactive hydrogen functional groups; providing a second and different resist material on top of said first resist material; selectively exposing said second resist material and developing said second and different resist material to form a resist mask; exposing said first resist material through the said resist mask and developing said first resist material; and reacting the surface layer of the exposed and uncovered first resist material with said organometallic material.

公开(公告)号：DE3689179T2

公开(公告)日：1994-05-05

申请号：DE3689179

申请日：1986-05-27

Applicant: IBM

Inventor： CHIONG KAOLIN ,  YANG BEA-JANE LIN ,  YANG JER-MING

IPC: H01L21/302 ,  G03F7/26 ,  H01L21/3065

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.