公开(公告)号：DE3689179D1

公开(公告)日：1993-11-25

申请号：DE3689179

申请日：1986-05-27

Applicant: IBM

Inventor： CHIONG KAOLIN ,  YANG BEA-JANE LIN ,  YANG JER-MING

IPC: H01L21/302 ,  G03F7/26 ,  H01L21/3065

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.

公开(公告)号：DE3689179T2

公开(公告)日：1994-05-05

申请号：DE3689179

申请日：1986-05-27

Applicant: IBM

Inventor： CHIONG KAOLIN ,  YANG BEA-JANE LIN ,  YANG JER-MING

IPC: H01L21/302 ,  G03F7/26 ,  H01L21/3065

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.

公开(公告)号：DE3585436D1

公开(公告)日：1992-04-02

申请号：DE3585436

申请日：1985-12-03

Applicant: IBM

Inventor： CHIONG KAOLIN ,  CHOW MING-FEA ,  YANG JER-MING

IPC: G03F7/36 ,  G03C1/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/40