公开(公告)号：DE3279523D1

公开(公告)日：1989-04-13

申请号：DE3279523

申请日：1982-05-28

Applicant: IBM

Inventor： ISAAC RANDALL DUANE ,  NING TAK HUNG ,  YANG DENNY DUAN-LEE

IPC: H01L27/10 ,  H01L21/3205 ,  H01L21/331 ,  H01L21/74 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8242 ,  H01L23/52 ,  H01L23/535 ,  H01L27/108 ,  H01L29/06 ,  H01L29/73

Abstract: An integrated circuit in the form of a MOSFET device contains a refractory metallic silicide (9) beneath a field isolation region (10) and in electrical contact with electrical conductive regions (P) of active impurity dopants in a semiconductive substrate (21).The layer of silicide (9) is fabricated by depositing refractory metal and reacting it with the substrate beneath by heat or ion implantation.