公开(公告)号：EP0042380A4

公开(公告)日：1983-04-18

申请号：EP80901014

申请日：1979-12-28

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  ISAAC RANDALL DUANE ,  MING TAK HUNG

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/331 ,  H01L23/485 ,  H01L29/10 ,  H01L21/22 ,  H01L21/20 ,  H01L21/265

CPC classification number: H01L21/033 ,  H01L23/485 ,  H01L29/1004 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making a transistor having base, collector, and emitter regions, where the impurity doping profile of the intrinsic (32) and extrinsic (22) base regions can closely approximate that which is ideal for the transistor. The extrinsic (22) and intrinsic (32) base regions are formed in separate steps, where the extrinsic base region (22) is formed first, followed by formation of the intrinsic base region (32). The portion of the extrinsic base region located over the area where the intrinsic base region is to be formed is removed, leaving an opening (26) through which both the emitter (30) and the intrinsic base regions (32) are formed. Thus, the effect of the step in which the extrinsic base region is formed is removed prior to formation of the intrinsic base region. Furthermore, the extrinsic base region is protected during formation of the intrinsic base region. This technique can be applied to processes using either ion implantation or diffusion to form the emitter and base regions of the transistor.

公开(公告)号：DE2967588D1

公开(公告)日：1986-04-24

申请号：DE2967588

申请日：1979-12-28

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  ISAAC RANDALL DUANE ,  MING TAK HUNG

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/331 ,  H01L23/485 ,  H01L29/10 ,  H01L21/22 ,  H01L21/20 ,  H01L21/265

公开(公告)号：DE3279523D1

公开(公告)日：1989-04-13

申请号：DE3279523

申请日：1982-05-28

Applicant: IBM

Inventor： ISAAC RANDALL DUANE ,  NING TAK HUNG ,  YANG DENNY DUAN-LEE

IPC: H01L27/10 ,  H01L21/3205 ,  H01L21/331 ,  H01L21/74 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8242 ,  H01L23/52 ,  H01L23/535 ,  H01L27/108 ,  H01L29/06 ,  H01L29/73

Abstract: An integrated circuit in the form of a MOSFET device contains a refractory metallic silicide (9) beneath a field isolation region (10) and in electrical contact with electrical conductive regions (P) of active impurity dopants in a semiconductive substrate (21).The layer of silicide (9) is fabricated by depositing refractory metal and reacting it with the substrate beneath by heat or ion implantation.

公开(公告)号：IT8026721D0

公开(公告)日：1980-12-18

申请号：IT2672180

申请日：1980-12-18

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  ISAAC RANDALL DUANE ,  NING TAK HUNG

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/331 ,  H01L23/485 ,  H01L29/10 ,  H01L

公开(公告)号：DE3374973D1

公开(公告)日：1988-01-28

申请号：DE3374973

申请日：1983-02-23

Applicant: IBM

Inventor： ISAAC RANDALL DUANE ,  NING TAK HUNG

IPC: H01L29/73 ,  H01L21/285 ,  H01L21/331 ,  H01L29/10 ,  H01L29/08

公开(公告)号：IT1150096B

公开(公告)日：1986-12-10

申请号：IT2672180

申请日：1980-12-18

Applicant: IBM

Inventor： CROWDER BILLY LEE ,  ISAAC RANDALL DUANE ,  TAK HUNG NING

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/331 ,  H01L23/485 ,  H01L29/10 ,  H01L