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    ACTIVE DEVICES USING THREADS
    1.
    发明公开
    ACTIVE DEVICES USING THREADS 审中-公开
    有源器件的使用线程的

    公开(公告)号：EP1390991A4

    公开(公告)日：2007-10-31

    申请号：EP02731116

    申请日：2002-03-08

    Applicant: IBM

    Inventor： SOLOMON PAUL MICHAEL ,  SHAW JANE MARGARET ,  KAGAN CHERIE R ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  NING TAK HUNG

    IPC: D02G3/44 ,  H01L29/06 ,  H01L29/786 ,  H01L41/08 ,  H01L41/113 ,  H01L51/00 ,  H01L51/05 ,  H01L35/24 ,  B32B27/12 ,  H05B33/02

    CPC classification number: D02G3/441 ,  H01L29/0657 ,  H01L51/0036 ,  H01L51/0512 ,  H02N2/18

    Abstract: Active devices that have either a thread or a ribbon geometry. The thread geometry includes single thread active devices and multiply thread devices. Single thread devices have a central core that may contain different materials depending upon whether the active device is responsive to electrical, light, mechanical, heat, or chemical energy. Single thread active devices include FETs, electro optical devices, stress transducers, and the like. The active devices include a semiconductor body that for the single thread device is a layer about the core of the thread. For the multiple thread devices, the semiconductor body is either a layer on one or more thread or an elongated body disposed between two of the threads. For example, a FET (50) is formed of three threads, of which carried a gate insulator layer (74) and a semiconductor layer (72) and the other two (58,60) of which are electrically conductive and serve as the source (58) and drain (60). The substrates or threads are preferably flexible and can be formed in a fabric.

    Soi cmos structure having programmable floating backplate
    3.
    发明专利
    Soi cmos structure having programmable floating backplate 未知

    公开(公告)号：GB2487492A

    公开(公告)日：2012-07-25

    申请号：GB201202931

    申请日：2010-11-02

    Applicant: IBM

    Inventor： NING TAK HUNG ,  CAI JIN ,  YAU JENG-BANG ,  KHAKIFIROOZ ALI ,  DENNARD ROBERT HEATH

    IPC: H01L21/84 ,  H01L27/12

    Abstract: SOI CMOS structures having at least one programmable electrically floating backplate are provided. Each electrically floating backplate is individually programmable. Programming can be performed by injecting electrons into each conductive floating backplate. Erasure of the programming can be accomplished by tunneling the electrons out of the floating backplate. At least one of two means can accomplish programming of the electrically floating backgate. The two means comprise Fowler-Nordheim tunneling, and hot electron injection using an SOI pFET. Hot electron injection using pFET can be done at much lower voltage than injection by tunneling electron injection.

    Eeprom having coplanar on-insulator fet and control gate
    4.
    发明专利
    Eeprom having coplanar on-insulator fet and control gate 未知

    公开(公告)号：IE79078B1

    公开(公告)日：1998-04-08

    申请号：IE970456

    申请日：1997-06-17

    Applicant: IBM

    Inventor： ACOVIC ALEXANDRE ,  NING TAK HUNG ,  SOLOMON PAUL MICHAEL

    IPC: H01L21/8247 ,  H01L27/115 ,  H01L27/12 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

    Abstract: An electrically erasable programmable read-only memory CEEPROM) includes a field effect transistor and a control gate spaced apart on a first insulating layer, a second insulating layer formed over the field effect transistor and the control gate and a common floating gate on the second insulating layer over the channel of the field effect transistor and the control gate, the floating gate thus also forms the gate electrode of the field-effect transistor. The EEPROM devices may be interconnected in a memory array and a plurality of memory arrays may be stacked on upon another. The invention overcomes the problem of using a non-standard silicon-on-insulator (SOI) CMOS process to make EEPROM arrays with high areal density.

    Messen von Biomolekülen und geladenen lonen in einem Elektrolyten
    7.
    发明专利
    Messen von Biomolekülen und geladenen lonen in einem Elektrolyten 未知

    公开(公告)号：DE112011100324T5

    公开(公告)日：2012-10-31

    申请号：DE112011100324

    申请日：2011-03-01

    Applicant: IBM

    Inventor： NING TAK HUNG ,  ZAFAR SUFI ,  DORMAN DONALD RICHARD

    IPC: G01N27/414

    Abstract: Ein Sensor für Biomoleküle oder geladene Ionen umfasst ein Substrat; einen ersten Knoten, einen zweiten Knoten und einen dritten Knoten, die in dem Substrat angeordnet sind; ein Gate-Dielektrikum, das über dem Substrat, dem ersten Knoten, dem zweiten Knoten und dem dritten Knoten angeordnet ist; einen ersten Feldeffekttransistor (FET), wobei der erste FET ein Steuer-Gate, das auf dem Gate-Dielektrikum angeordnet ist, und den ersten Knoten und den zweiten Knoten umfasst; und einen zweiten FET, wobei der zweite FET eine Messoberfläche, die auf dem Gate-Dielektrikum angeordnet ist, und den zweiten Knoten und den dritten Knoten umfasst, wobei die Messoberfläche dafür aufgebaut ist, die Biomoleküle oder geladenen Ionen, die nachgewiesen werden sollen, spezifisch zu binden.

    Sensing biomolecules & charged ions in an electrolyte
    10.
    发明专利
    Sensing biomolecules & charged ions in an electrolyte 未知

    公开(公告)号：GB2491934A

    公开(公告)日：2012-12-19

    申请号：GB201207849

    申请日：2011-03-01

    Applicant: IBM

    Inventor： ZAFAR SUFI ,  NING TAK HUNG ,  DORMAN DONALD RICHARD

    IPC: G01N27/414

    Abstract: A sensor for biomolecules or charged ions includes a substrate; a first node, a second node, and a third node located in the substrate; a gate dielectric located over the substrate, the first node, the second node, and the third node; a first field effect transistor (FET), the first FET comprising a control gate located on the gate dielectric, and the first node and the second node; and a second FET, the second FET comprising a sensing surface located on the gate dielectric, and the second node and the third node, wherein the sensing surface is configured to specifically bind the biomolecules or charged ions that are to be detected.

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