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公开(公告)号:DE68919461T2
公开(公告)日:1995-05-24
申请号:DE68919461
申请日:1989-08-03
Applicant: IBM
IPC: G11B5/39
Abstract: A shielded magnetoresistive (MR) sensor in which the first shield (12) is of sendust or super sendust and the second shield is of permalloy is made by the steps of depositing a layer of sendust or super sendust to form a first shield; heat treating the sendust layer at a temperature greater than 400 DEG C; depositing a first electrically insulating layer (18) ; depositing, in the presence of a magnetic field, a MR layer (20) ; depositing a second layer (26) of electrically insulating material; and, depositing a layer (28) of permalloy to form the second shield.
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公开(公告)号:DE68919461D1
公开(公告)日:1995-01-05
申请号:DE68919461
申请日:1989-08-03
Applicant: IBM
IPC: G11B5/39
Abstract: A shielded magnetoresistive (MR) sensor in which the first shield (12) is of sendust or super sendust and the second shield is of permalloy is made by the steps of depositing a layer of sendust or super sendust to form a first shield; heat treating the sendust layer at a temperature greater than 400 DEG C; depositing a first electrically insulating layer (18) ; depositing, in the presence of a magnetic field, a MR layer (20) ; depositing a second layer (26) of electrically insulating material; and, depositing a layer (28) of permalloy to form the second shield.
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