公开(公告)号：GB2579748A

公开(公告)日：2020-07-01

申请号：GB202003124

申请日：2018-07-26

Applicant: IBM

Inventor： YUN SEOG LEE ,  DEVENDRA SADANA ,  SOUZA DE

IPC: H01M10/0525

Abstract: A solid-state lithium-based battery having fast charging and recharging speeds (above 3 C) is provided by including a nitrogen-enriched lithiated cathode material surface layer between the lithiated cathode material layer and the lithium-based solid-state electrolyte layer. The nitrogen-enriched lithiated cathode material surface layer can be formed by introducing nitrogen into a lithiated cathode material. The nitrogen can be introduced during the final stage of a deposition process or by utilizing a different process, such as, for example, thermal nitridation, than a deposition process.

公开(公告)号：GB2574776B

公开(公告)日：2022-03-30

申请号：GB201914035

申请日：2018-02-21

Applicant: IBM

Inventor： YUN SEOG LEE ,  DEVENDRA SADANA ,  SOUZA DE

IPC: H01M10/058 ,  H01M4/64 ,  H01M10/0525

Abstract: A solid-state lithium-based battery is provided in which the formation of lithium islands (i.e., lumps) during a charging/recharging cycle is reduced, or even eliminated. Reduction or elimination of lithium islands (i.e., lumps) can be provided by forming a lithium nucleation enhancement liner between a lithium-based solid-state electrolyte layer and a top electrode of a solid-state lithium based battery.

公开(公告)号：GB2580827B

公开(公告)日：2022-02-23

申请号：GB202004615

申请日：2018-09-21

Applicant: IBM

Inventor： JOEL PEREIRA DE SOUZA ,  NING LI ,  YAO YAO ,  DEVENDRA SADANA ,  YUN SEOG LEE

IPC: H01L33/00

Abstract: A semiconductor device is formed using an n-type layer of Zinc Oxide, a p-type layer formed of a narrow bandgap material. The narrow bandgap material uses a group 3A element and a group 5A element. A junction is formed between the n-type layer and the p-type layer, the junction being operable as a heterojunction diode having a rectifying property at a temperature range, the temperature range having a high limit at room temperature.

公开(公告)号：GB2579748B

公开(公告)日：2022-01-19

申请号：GB202003124

申请日：2018-07-26

Applicant: IBM

Inventor： YUN SEOG LEE ,  DEVENDRA SADANA ,  SOUZA DE

IPC: H01M10/0525

Abstract: A solid-state lithium-based battery having fast charging and recharging speeds (above 3 C) is provided by including a nitrogen-enriched lithiated cathode material surface layer between the lithiated cathode material layer and the lithium-based solid-state electrolyte layer. The nitrogen-enriched lithiated cathode material surface layer can be formed by introducing nitrogen into a lithiated cathode material. The nitrogen can be introduced during the final stage of a deposition process or by utilizing a different process, such as, for example, thermal nitridation, than a deposition process.

公开(公告)号：GB2584548B

公开(公告)日：2021-03-31

申请号：GB202005406

申请日：2018-09-11

Applicant: IBM

Inventor： YUN SEOG LEE ,  STEPHEN W BEDELL ,  JOEL PEREIRA DE SOUZA ,  DEVENDRA SADANA

IPC: H01M10/04 ,  H01M4/131 ,  H01M4/136 ,  H01M4/505 ,  H01M4/525 ,  H01M4/58 ,  H01M4/66 ,  H01M4/78 ,  H01M10/0525 ,  H01M10/058

Abstract: High-capacity (i.e., a capacity of 50 mAh/gm or greater) and high-performance rechargeable batteries are provided that contain a rechargeable battery stack that includes a spalled material structure that includes a cathode material layer that is attached to a stressor material. The cathode material may include a single crystalline that is devoid of polymeric binders. The stressor material serves as a cathode current collector of the rechargeable battery stack.

公开(公告)号：GB2580827A

公开(公告)日：2020-07-29

申请号：GB202004615

申请日：2018-09-21

Applicant: IBM

Inventor： JOEL PEREIRA DE SOUZA ,  NING LI ,  YAO YAO ,  DEVENDRA SADANA ,  YUN SEOG LEE

IPC: H01L33/00

Abstract: A semiconductor device is formed using an n-type layer of Zinc Oxide, a p-type layer formed of a narrow bandgap material. The narrow bandgap material uses a group 3A element and a group 5A element. A junction is formed between the n-type layer and the p-type layer, the junction being operable as a heterojunction diode having a rectifying property at a temperature range, the temperature range having a high limit at room temperature.

公开(公告)号：GB2581902B

公开(公告)日：2022-04-20

申请号：GB202006963

申请日：2018-11-16

Applicant: IBM

Inventor： NING LI ,  YUN SEOG LEE ,  JOEL PEREIRA DE SOUZA ,  DEVENDRA SADANA

IPC: H01L29/78 ,  G11C11/54 ,  H01M10/0585

Abstract: A semiconductor structure is provided that contains a non-volatile battery which controls gate bias and has increased output voltage retention and voltage resolution. The semiconductor structure may include a semiconductor substrate including at least one channel region that is positioned between source/drain regions. A gate dielectric material is located on the channel region of the semiconductor substrate. A battery stack is located on the gate dielectric material. The battery stack includes, a cathode current collector located on the gate dielectric material, a cathode material located on the cathode current collector, a first ion diffusion barrier material located on the cathode material, an electrolyte located on the first ion diffusion barrier material, a second ion diffusion barrier material located on the electrolyte, an anode region located on the second ion diffusion barrier material, and an anode current collector located on the anode region.

公开(公告)号：GB2584548A

公开(公告)日：2020-12-09

申请号：GB202005406

申请日：2018-09-11

Applicant: IBM

Inventor： YUN SEOG LEE ,  STEPHEN W BEDELL ,  JOEL PEREIRA DE SOUZA ,  DEVENDRA SADANA

IPC: H01M10/04 ,  H01M4/131 ,  H01M4/136 ,  H01M4/505 ,  H01M4/525 ,  H01M4/58 ,  H01M4/66 ,  H01M4/78 ,  H01M10/0525 ,  H01M10/058

Abstract: High-capacity (i.e., a capacity of 50 mAh/gm or greater) and high-performance rechargeable batteries are provided that contain a rechargeable battery stack that includes a spalled material structure that includes a cathode material layer that is attached to a stressor material. The cathode material may include a single crystalline that is devoid of polymeric binders. The stressor material serves as a cathode current collector of the rechargeable battery stack.

公开(公告)号：GB2581902A

公开(公告)日：2020-09-02

申请号：GB202006963

申请日：2018-11-16

Applicant: IBM

Inventor： NING LI ,  YUN SEOG LEE ,  JOEL PEREIRA DE SOUZA ,  DEVENDRA SADANA

IPC: H01L21/822

Abstract: A semiconductor structure is provided that contains a non-volatile battery which controls gate bias and has increased output voltage retention and voltage resolution. The semiconductor structure may include a semiconductor substrate including at least one channel region that is positioned between source/drain regions. A gate dielectric material is located on the channel region of the semiconductor substrate. A battery stack is located on the gate dielectric material. The battery stack includes, a cathode current collector located on the gate dielectric material, a cathode material located on the cathode current collector, a first ion diffusion barrier material located on the cathode material, an electrolyte located on the first ion diffusion barrier material, a second ion diffusion barrier material located on the electrolyte, an anode region located on the second ion diffusion barrier material, and an anode current collector located on the anode region.

公开(公告)号：GB2574776A

公开(公告)日：2019-12-18

申请号：GB201914035

申请日：2018-02-21

Applicant: IBM

Inventor： YUN SEOG LEE ,  DEVENDRA SADANA ,  SOUZA DE

IPC: H01M10/058 ,  H01M4/64 ,  H01M10/0525

Abstract: A solid-state lithium-based battery is provided in which the formation of lithium islands (i.e., lumps) during a charging/recharging cycle is reduced, or even eliminated. Reduction or elimination of lithium islands (i.e., lumps) can be provided by forming a lithium nucleation enhancement liner between a lithium-based solid-state electrolyte layer and a top electrode of a solid-state lithium based battery.