公开(公告)号：JPS62232127A

公开(公告)日：1987-10-12

申请号：JP3596487

申请日：1987-02-20

Applicant: IBM

Inventor： BUCHMANN PETER LEO ,  VETTIGER PETER ,  ZEGHBROECK BART JOZEF VAN

IPC: H01L21/30 ,  G03F7/40 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

公开(公告)号：DE3682395D1

公开(公告)日：1991-12-12

申请号：DE3682395

申请日：1986-03-27

Applicant: IBM

Inventor： BUCHMANN PETER LEO ,  VETTIGER PETER ,  ZEGHBROECK BART JOZEF VAN

IPC: H01L21/30 ,  G03F7/40 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03F7/26

Abstract: Prodn. of sidewalls for use in fabrication of structures with sub-micron lateral dimensions comprises: (a) depositing on a substrate a patterned layer of polymeric resist comprising active H (-OH, -NH, -SH) to form a profile with vertical edges where the sidewalls are to be formed; (b) treating the resist with reactive organometallic silylation agent to substitute active H with Si atoms, i.e. to silylate the top and vertical edges of the profile to a predetermined depth and render the surfaces highly oxygen dry etch resistant, and (c) anisotropic oxygen dry etching to remove silylated resist at the top of the profile and then unsilylated resist, leaving silylated vertical edges of the profile, forming the desired sidewalls, unaffected.

公开(公告)号：BR8700836A

公开(公告)日：1987-12-22

申请号：BR8700836

申请日：1987-02-23

Applicant: IBM

Inventor： BUCHMANN PETER LEO ,  VETTIGER PETER ,  ZEGHBROECK BART JOZEF VAN

IPC: H01L21/30 ,  G03F7/40 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/70

Abstract: A process for forming sidewalls for use in the fabrication of semiconductor structures, where the thin, vertical sidewalls are "image transferred" to define sub-micron lateral dimensions.First, a patterned resist profile (13A, 13B) with substantially vertical edges is formed on a substrate (11, 12) on which the sidewalls are to be created. Then, the profile is soaked in a reactive organometallic silylation agent to silylate the top and the vertical edges of the resist to a predetermined depth, thereby rendering the profile surfaces (15S, 15T) highly oxygen etch resistant. In a subsequent anisotropic RIE process, the top (15T) of the profile and the unsilylated resist are removed, leaving the silylated vertical edges (15S), that provide the desired free-standing sidewalls, essen­tially unaffected.