4.
    发明专利
    未知

    公开(公告)号:DE3682395D1

    公开(公告)日:1991-12-12

    申请号:DE3682395

    申请日:1986-03-27

    Applicant: IBM

    Abstract: Prodn. of sidewalls for use in fabrication of structures with sub-micron lateral dimensions comprises: (a) depositing on a substrate a patterned layer of polymeric resist comprising active H (-OH, -NH, -SH) to form a profile with vertical edges where the sidewalls are to be formed; (b) treating the resist with reactive organometallic silylation agent to substitute active H with Si atoms, i.e. to silylate the top and vertical edges of the profile to a predetermined depth and render the surfaces highly oxygen dry etch resistant, and (c) anisotropic oxygen dry etching to remove silylated resist at the top of the profile and then unsilylated resist, leaving silylated vertical edges of the profile, forming the desired sidewalls, unaffected.

    5.
    发明专利
    未知

    公开(公告)号:DE3685495D1

    公开(公告)日:1992-07-02

    申请号:DE3685495

    申请日:1986-07-11

    Applicant: IBM

    Abstract: Undercut mask profiles are formed in a semiconductor process by depositing a first plasma CVD nitride layer followed by a second plasma CVD nitride layer at a different excitation frequency, so that the two layer have different etch rates; and patterning and etching the double layer structure to form the desired undercut profile. Method is simple and easy to control and the undercut profile has good temp. stability. The nitride layer are SiNx, SiOxNy or BNx. The gas compsn. for each CVD stage is different, pref. NH3, N2 and SiH4 for the first stage; and N2 and SiH4 for the second stage. The RF frequency is 1-50 MH2 for the first stage and below 100 MHz for the second stage.

    6.
    发明专利
    未知

    公开(公告)号:BR8700836A

    公开(公告)日:1987-12-22

    申请号:BR8700836

    申请日:1987-02-23

    Applicant: IBM

    Abstract: A process for forming sidewalls for use in the fabrication of semiconductor structures, where the thin, vertical sidewalls are "image transferred" to define sub-micron lateral dimensions.First, a patterned resist profile (13A, 13B) with substantially vertical edges is formed on a substrate (11, 12) on which the sidewalls are to be created. Then, the profile is soaked in a reactive organometallic silylation agent to silylate the top and the vertical edges of the resist to a predetermined depth, thereby rendering the profile surfaces (15S, 15T) highly oxygen etch resistant. In a subsequent anisotropic RIE process, the top (15T) of the profile and the unsilylated resist are removed, leaving the silylated vertical edges (15S), that provide the desired free-standing sidewalls, essen­tially unaffected.

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