公开(公告)号：AU7849491A

公开(公告)日：1992-01-23

申请号：AU7849491

申请日：1991-06-18

Applicant: IBM

Inventor： ZIMMERMAN STEVEN MICHAEL

IPC: H01J1/304 ,  H01J1/30 ,  H01J9/02 ,  H01L21/461 ,  H01L23/485 ,  H01L49/00

Abstract: The present invention relates generally to new structures for a field emission cathode and processes for fabricating the same. The field emission is made of any material that is capable of emitting electrons under the influence of an electrical potential. A process for making one embodiment of the invention includes the steps of forming a hole (15) in a substrate (5), depositing a first material (20) in said hole to form a cusp (21), depositing an electron emitting material (30) to fill at least partly said cusp and removing the first material to expose a portion (31) of the electron emitting material. The field emission cathode has several unique three dimensional structures. The basic structure comprises a layer of material with cathode tips. For a more complex structure the cathode tip is preferably accurately aligned inside an extraction/control electrode structure, in preferably a vacuum environment. The structures of this invention can be fabricated to be connected to other similar field emission cathodes or to other electronic devices.

公开(公告)号：AU7849391A

公开(公告)日：1992-01-23

申请号：AU7849391

申请日：1991-06-18

Applicant: IBM

Inventor： ZIMMERMAN STEVEN MICHAEL

IPC: H01J1/304 ,  H01J9/02 ,  H01J21/10 ,  H01L21/461 ,  H01L23/485 ,  H01L49/00 ,  H01J1/30

Abstract: The present invention relates generally to a new integrated Microelectronic Device and a method for making the same. Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar devices or to other electronic devices.

公开(公告)号：DE2410880A1

公开(公告)日：1974-09-19

申请号：DE2410880

申请日：1974-03-07

Applicant: IBM

Inventor： KAPLAN LEON H ,  LOUNSBURY JOHN BALDWIN ,  ZIMMERMAN STEVEN MICHAEL

IPC: G03F7/039 ,  G03F7/022 ,  G03F7/038 ,  G03F7/085 ,  H01L21/027 ,  G03F7/00

公开(公告)号：IN178989B

公开(公告)日：1997-08-02

申请号：IN1152DE1990

申请日：1990-11-22

Applicant: IBM

Inventor： ZIMMERMAN STEVEN MICHAEL

IPC: H01J31/00

公开(公告)号：NZ238590A

公开(公告)日：1993-07-27

申请号：NZ23859091

申请日：1991-06-18

Applicant: IBM

Inventor： ZIMMERMAN STEVEN MICHAEL

IPC: H01J1/30 ,  H01J9/02 ,  H01J1/304 ,  H01J19/02

Abstract: The present invention relates generally to new structures for a field emission cathode and processes for fabricating the same. The field emission is made of any material that is capable of emitting electrons under the influence of an electrical potential. A process for making one embodiment of the invention includes the steps of forming a hole (15) in a substrate (5), depositing a first material (20) in said hole to form a cusp (21), depositing an electron emitting material (30) to fill at least partly said cusp and removing the first material to expose a portion (31) of the electron emitting material. The field emission cathode has several unique three dimensional structures. The basic structure comprises a layer of material with cathode tips. For a more complex structure the cathode tip is preferably accurately aligned inside an extraction/control electrode structure, in preferably a vacuum environment. The structures of this invention can be fabricated to be connected to other similar field emission cathodes or to other electronic devices.

公开(公告)号：DE3375433D1

公开(公告)日：1988-02-25

申请号：DE3375433

申请日：1983-01-26

Applicant: IBM

Inventor： KAPLAN LEON H ,  KAPLAN RICHARD DEAN ,  ZIMMERMAN STEVEN MICHAEL

IPC: G03F7/26 ,  G03F7/039 ,  G03F7/09 ,  G03F7/105 ,  G03F7/11 ,  H01L21/027 ,  G03F7/02

Abstract: The invention relates to an optical lithography process for creating patterns in a silicon semiconductor substrate. The improved resolution, as used in the very large scale integration of electronic circuits, is obtained by employing a thin film of 4-phenylazo-1-naphthylamine between the silicon substrate and the overlying layer of a light sensitive photoresist. The 4-phenylazo-1-naphthylamine acts as a stable, highly light absorbent medium exhibiting chemical and physical compatibility with the silicon substrate and photoresists with ether-type solvent systems.

公开(公告)号：DE3162480D1

公开(公告)日：1984-04-12

申请号：DE3162480

申请日：1981-04-08

Applicant: IBM

Inventor： KAPLAN LEON H ,  ZIMMERMAN STEVEN MICHAEL

IPC: G03F7/022 ,  G03F7/20 ,  G03F7/26 ,  G03F7/30 ,  G03F7/36 ,  H01L21/027 ,  G03F7/08

Abstract: The invention relates to a process for producing a patterned resist image in a layer of a phenol-formaldehyde/diazoketone resist material. … The exposed patterns in the resist layer are developed in an oxygen plasma by treating the resist layers, prior to development, with a magnesium salt. This produces a negative pattern. Positive patterns are produced by combining the process with decarboxylation of the exposed areas followed by blanket exposure.