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公开(公告)号:JP2001013670A
公开(公告)日:2001-01-19
申请号:JP2000160870
申请日:2000-05-30
Applicant: IBM , INFINEON TECHNOLOGIES CORP
Inventor: SHAHIDO BUTTO , KAMIZU FARAHAPUURU , HAFFNER HENNING , MARK A RABIN , LAAS W LIEBMANN , DONALD J SAMUELS
Abstract: PROBLEM TO BE SOLVED: To provide a method for enhancing the efficiency of the proximity correction of a pattern forming process in terms of given chip layout design, and constitution therefor. SOLUTION: This method includes a step G01 for describing the pattern forming process in accordance with at least one layout parameter, a step G03 for making the distribution of at least one parameter discrete, a step G05 for providing an error correction table linking the correction of layout with at least one parameter and a step G06 for correcting the layout by applying correction in the table to the layout at least once.
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公开(公告)号:JPH11340138A
公开(公告)日:1999-12-10
申请号:JP11785799
申请日:1999-04-26
Applicant: IBM
Inventor: DONALD J SAMUELS , ALAN C THOMAS
IPC: H01L21/027 , G03F7/20 , G03F9/00
Abstract: PROBLEM TO BE SOLVED: To remove standing waves existing in a photoresist without changing the overall thickness of the photoresist material by changing the exposed light used for the removal from single exposed light of one phase to a plurality of exposed light rays of different phases, and dispersing the effect of the standing wave in each phase. SOLUTION: After each pulse of light energy, a rotary disk is rotated from the current opening and the opening is replaced with a new opening having a different thickness from the current opening. When light rays are forcedly passed through these optical openings, the light rays pass through routes having lengths which partially vary depending upon the openings. In short, each laser pulse arrives at a wafer 22 in a different phase than the previous position and removes standing waves existing in a photoresist arranged on the upper surface of the wafer 22. In other wards, the effects of the standing waves are dispersed by changing one optical path toward the photoresist from a light source to a plurality of routes having different optical path lengths.
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