公开(公告)号：JP2001358229A

公开(公告)日：2001-12-26

申请号：JP2001134513

申请日：2001-05-01

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： YUN YUU WAN ,  JAMMY RAJARAO ,  KIMBALL LEE J ,  KOTECKI DAVID E ,  LIAN JENNY ,  CHENTEIN RIN ,  MILLER JOHN A ,  NAGEL NICHOLAS ,  SHEN HUA ,  WILDMAN HORATIO S

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To provide a recessed electrode structure which interrupts the crystal grain boundary of an electrode and blocks the diffusion from the side wall. SOLUTION: The capacitor structure comprises an upper platinum electrode, a lower electrode and an insulator on the side wall of the electrode, and the lower electrode has a first recessed portion deposited to the insulator on its side wall and a second insulator portion deposited thereto.