公开(公告)号：JP2001358229A

公开(公告)日：2001-12-26

申请号：JP2001134513

申请日：2001-05-01

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： YUN YUU WAN ,  JAMMY RAJARAO ,  KIMBALL LEE J ,  KOTECKI DAVID E ,  LIAN JENNY ,  CHENTEIN RIN ,  MILLER JOHN A ,  NAGEL NICHOLAS ,  SHEN HUA ,  WILDMAN HORATIO S

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To provide a recessed electrode structure which interrupts the crystal grain boundary of an electrode and blocks the diffusion from the side wall. SOLUTION: The capacitor structure comprises an upper platinum electrode, a lower electrode and an insulator on the side wall of the electrode, and the lower electrode has a first recessed portion deposited to the insulator on its side wall and a second insulator portion deposited thereto.

公开(公告)号：EP1356498A4

公开(公告)日：2009-05-13

申请号：EP01990114

申请日：2001-12-13

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： ENGEL BRETT H ,  HOINKIS MARK ,  MILLER JOHN A ,  SEO SOON-CHEON ,  WANG YUN-YU ,  WONG HON WONG

IPC: H01K3/10 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/50 ,  H01L23/52 ,  H01L23/532 ,  H05K3/02

CPC classification number: H01L21/76843 ,  H01L21/76846 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165 ,  H01L2924/00

Abstract: In integrated circuits having copper interconnect (30, 50) and low-k interlayer dielectrics (40), a problem of open circuits after heat treatment was discovered and solved bz the use of a first liner layer of Cr (42), followed by a conformal liner layer of CVD TiN (46), followed in turn bz a final liner layer of Ta or TaN (48), thus improving adhesion between the via (50) and the underlying copper layer (30) while maintianing low resistance.