公开(公告)号：DE2137976A1

公开(公告)日：1973-02-08

申请号：DE2137976

申请日：1971-07-29

Applicant: IBM DEUTSCHLAND

Inventor： BAITINGER UTZ DIPL ING DR ,  NAJMANN KNUT DIPL ING

IPC: G11C11/411 ,  H01L27/082 ,  H01L27/102 ,  G11C11/40

公开(公告)号：DE2243671A1

公开(公告)日：1974-03-28

申请号：DE2243671

申请日：1972-09-06

Applicant: IBM DEUTSCHLAND

Inventor： BAITINGER UTZ DIPL ING DR ,  HAUG WERNER DIPL ING ,  ILLI MANFRED DIPL ING DR ,  REMSHARDT ROLF DIPL ING DR

IPC: G11C11/413 ,  G11C11/407 ,  H03K19/017 ,  H03K19/094 ,  H03K17/04

公开(公告)号：DE2460150A1

公开(公告)日：1976-06-24

申请号：DE2460150

申请日：1974-12-19

Applicant: IBM DEUTSCHLAND

Inventor： BAITINGER UTZ DIPL ING DR ,  NAJMANN KNUT DIPL ING ,  HAUG WERNER DIPL ING

IPC: G11C11/411 ,  H01L21/8229 ,  H01L27/07 ,  H01L27/102 ,  G11C11/40

Abstract: A semiconductor storage circuit for use in monolithic memories. The circuit is comprised of a storage cell coupled to input-output bit lines through active devices having symmetrical conduction properties. The storage cell can be comprised of a pair of cross coupled bipolar transistors having resistors as collector load devices. Schottky field effect transistors (MESFET's) are active devices having symmetrical conduction properties.

公开(公告)号：DE2232274A1

公开(公告)日：1974-01-31

申请号：DE2232274

申请日：1972-06-30

Applicant: IBM DEUTSCHLAND

Inventor： BAITINGER UTZ DIPL ING DR ,  FRANTZ HERMANN ,  HAUG WERNER DIPL ING ,  ILLI MANFRED DIPL ING DR ,  KELLER GUENTER DIPL ING

IPC: G11C11/412 ,  G05F3/24 ,  G11C11/407 ,  G11C11/417 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L1/24