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    METHOD FOR MANUFACTURING A MICROMACHINED DEVICE
    1.
    发明申请
    METHOD FOR MANUFACTURING A MICROMACHINED DEVICE 审中-公开
    制造微机械装置的方法

    公开(公告)号：WO2008053008A2

    公开(公告)日：2008-05-08

    申请号：PCT/EP2007/061731

    申请日：2007-10-31

    Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) ,  ASML NETHERLANDS BV ,  WITVROUW, Ann ,  HASPESLAGH, Luc

    Inventor： WITVROUW, Ann ,  HASPESLAGH, Luc

    IPC: B81C1/00

    CPC classification number: H01L21/324 ,  B81C1/00246 ,  B81C2203/0735 ,  Y10T428/24612

    Abstract: The present invention provides a method for manufacturing micromachined devices on a substrate (10) comprising electrical circuitry, the micromachined devices comprising at least one micromachined structure, without affecting the underlying electrical circuitry. The method comprises providing a protection layer (15) on the substrate (10); providing on the protection layer (15) a plurality of patterned layers for forming the at least one micromachined structure, the plurality of patterned layers comprising at least one sacrificial layer (18); and thereafter removing at least a portion of the sacrificial layer (18) to release the at least one micromachined structure. The method furthermore comprises, before providing the protection layer (15), annealing the substrate (10) at a temperature higher than a highest temperature used during manufacturing of the micromachined device, annealing being for preventing gas formation underneath the protection layer (15) during subsequent manufacturing steps. The present invention also provides a micromachined device obtained by the method according to embodiments of the present invention.

    Abstract translation: 本发明提供了一种用于在包括电路的基板（10）上制造微机械装置的方法，所述微机械装置包括至少一个微机械结构，而不影响下面的电路。 该方法包括在衬底（10）上提供保护层（15）; 在所述保护层（15）上提供用于形成所述至少一个微机械结构的多个图案化的层，所述多个图案化的层包括至少一个牺牲层（18）; 之后去除牺牲层（18）的至少一部分以释放至少一个微机械结构。 在提供保护层（15）之前，该方法还包括在高于在制造微机械装置期间使用的最高温度的温度下退火衬底（10），退火是为了防止在保护层（15）下方在保护层 后续制造步骤。 本发明还提供了通过根据本发明的实施例的方法获得的微机械装置。

    INTEGRATED CIRCUIT FOR SPECTRAL IMAGING SYSTEM
    2.
    发明申请
    INTEGRATED CIRCUIT FOR SPECTRAL IMAGING SYSTEM 审中-公开
    用于光谱成像系统的集成电路

    公开(公告)号：WO2011064403A1

    公开(公告)日：2011-06-03

    申请号：PCT/EP2010/068575

    申请日：2010-11-30

    Applicant: IMEC ,  TACK, Klaas ,  LAMBRECHTS, Andy ,  HASPESLAGH, Luc

    Inventor： TACK, Klaas ,  LAMBRECHTS, Andy ,  HASPESLAGH, Luc

    IPC: G01J3/26 ,  G01J3/28 ,  G01J3/12

    CPC classification number: G01J3/2823 ,  G01J3/12 ,  G01J3/26 ,  G01J3/2803 ,  G01J2003/1226 ,  G01J2003/265 ,  G01J2003/2806 ,  G01J2003/2826 ,  H04N5/332 ,  H04N5/378

    Abstract: An integrated circuit for an imaging system has an array of optical sensors (40), and an array of optical filters (10) each configured to pass a band of wavelengths onto one or more of the sensors, the array of optical filters being integrated with the array of sensors, and the integrated circuit also having read out circuitry (30) to read out pixel values from the array of sensors to represent an image, different ones of the optical filters being configured to have a different thickness, to pass different bands of wavelengths by means of interference, to allow detection of a spectrum of wavelengths. The read out circuitry can enable multiple pixels under one optical filter to be read out in parallel. The thicknesses may vary non monotonically across the array. The read out, or later image processing, may involve selection or interpolation between wavelengths, to carry out spectral sampling or shifting, to compensate for thickness errors.

    Abstract translation: 一种用于成像系统的集成电路具有光学传感器阵列（40）和每个被配置成将波长带传递到一个或多个传感器上的滤光器阵列（10），所述滤光器阵列与 所述传感器阵列和所述集成电路还具有读出电路（30），以从所述传感器阵列中读出像素值以表示图像，所述不同的所述滤光器被配置为具有不同的厚度以通过不同的带 的波长，以允许检测波长的光谱。 读出电路可以使一个光学滤波器下的多个像素平行读出。 厚度可以在整个阵列上单调变化。 读出或稍后的图像处理可能涉及波长之间的选择或插值，以进行频谱采样或移位，以补偿厚度误差。

    INTEGRATED CIRCUIT FOR SPECTRAL IMAGING SYSTEM
    3.
    发明公开
    INTEGRATED CIRCUIT FOR SPECTRAL IMAGING SYSTEM 审中-公开
    光谱成像系统的集成电路

    公开(公告)号：EP2507599A1

    公开(公告)日：2012-10-10

    申请号：EP10798279.5

    申请日：2010-11-30

    Applicant: IMEC

    Inventor： TACK, Klaas ,  LAMBRECHTS, Andy ,  HASPESLAGH, Luc

    IPC: G01J3/26 ,  G01J3/28 ,  G01J3/12

    CPC classification number: G01J3/2823 ,  G01J3/12 ,  G01J3/26 ,  G01J3/2803 ,  G01J2003/1226 ,  G01J2003/265 ,  G01J2003/2806 ,  G01J2003/2826 ,  H04N5/332 ,  H04N5/378

    Abstract: An integrated circuit for an imaging system has an array of optical sensors (40), and an array of optical filters (10) each configured to pass a band of wavelengths onto one or more of the sensors, the array of optical filters being integrated with the array of sensors, and the integrated circuit also having read out circuitry (30) to read out pixel values from the array of sensors to represent an image, different ones of the optical filters being configured to have a different thickness, to pass different bands of wavelengths by means of interference, to allow detection of a spectrum of wavelengths. The read out circuitry can enable multiple pixels under one optical filter to be read out in parallel. The thicknesses may vary non monotonically across the array. The read out, or later image processing, may involve selection or interpolation between wavelengths, to carry out spectral sampling or shifting, to compensate for thickness errors.

    Abstract translation: 用于成像系统的集成电路具有光学传感器阵列（40）和光学滤波器阵列（10），每个光学滤波器被配置为将波长带传递到一个或多个传感器上，光学滤波器阵列与 传感器阵列以及集成电路还具有读出电路（30）以读出来自传感器阵列的像素值以表示图像，不同的光学滤波器被配置为具有不同的厚度以通过不同的频带 通过干涉的波长，以允许检测波长的光谱。 读出电路可以使一个光学滤波器下的多个像素并行读出。 阵列的厚度可能非单调变化。 读出或稍后的图像处理可能涉及波长之间的选择或内插，以执行频谱采样或移位，以补偿厚度误差。

    INTEGRATED CIRCUIT FOR SPECTRAL IMAGING SYSTEM
    4.
    发明公开
    INTEGRATED CIRCUIT FOR SPECTRAL IMAGING SYSTEM 审中-公开

    公开(公告)号：EP4137790A1

    公开(公告)日：2023-02-22

    申请号：EP22200035.8

    申请日：2010-11-30

    Applicant: Imec VZW

    Inventor： TACK, Klaas ,  LAMBRECHTS, Andy ,  HASPESLAGH, Luc

    IPC: G01J3/26 ,  G01J3/28 ,  G01J3/12

    Abstract: The invention refers to an integrated circuit for an imaging system having arrays of optical sensors (40) and of optical filters (10), integrated with each other, each configured to pass a band of wavelengths, and further having read out circuitry (30) to read out pixel values from the array of sensors (40) to represent an image. Different ones of the optical filters (10) have different thicknesses to pass different bands of wavelengths by means of interference, to allow detection of a spectrum of wavelengths. The read out circuitry (30) has a wavelength selector for selecting between or combining read out signals of corresponding pixels of different optical filters (10). The invention further refers to an imaging system comprising such an integrated circuit and to a method of operating the imaging system to produce an output image by performing hyperspectral imaging.

    METHOD FOR MANUFACTURING A MICROMACHINED DEVICE
    6.
    发明公开
    METHOD FOR MANUFACTURING A MICROMACHINED DEVICE 审中-公开
    用于制造微器件的方法EDITED

    公开(公告)号：EP2089311A2

    公开(公告)日：2009-08-19

    申请号：EP07847091.1

    申请日：2007-10-31

    Applicant: IMEC ,  ASML Netherlands B.V.

    Inventor： WITVROUW, Ann ,  HASPESLAGH, Luc

    IPC: B81C1/00

    Abstract: The present invention provides a method for manufacturing micromachined devices on a substrate (10) comprising electrical circuitry, the micromachined devices comprising at least one micromachined structure, without affecting the underlying electrical circuitry. The method comprises providing a protection layer (15) on the substrate (10); providing on the protection layer (15) a plurality of patterned layers for forming the at least one micromachined structure, the plurality of patterned layers comprising at least one sacrificial layer (18); and thereafter removing at least a portion of the sacrificial layer (18) to release the at least one micromachined structure. The method furthermore comprises, before providing the protection layer (15), annealing the substrate (10) at a temperature higher than a highest temperature used during manufacturing of the micromachined device, annealing being for preventing gas formation underneath the protection layer (15) during subsequent manufacturing steps. The present invention also provides a micromachined device obtained by the method according to embodiments of the present invention.

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