公开(公告)号：EP2479891A1

公开(公告)日：2012-07-25

申请号：EP11168324.9

申请日：2011-05-31

Applicant: IMEC

Inventor： Rottenberg, Xavier ,  Jansen, Roelof ,  Stoffels, Steve ,  Tilmans, Hendrikus

IPC: H03H9/02

CPC classification number: H03H9/02338 ,  H03H2009/0244 ,  H03H2009/02496

Abstract: MEMS resonator comprising: a substrate; a resonator body (1) suspended above the substrate by means of clamped-clamped beams (4), each beam comprising two support legs (41, 42) with a common connection (5) to the resonator body, the resonator body (1) being adapted for resonating at an operating frequency (fres); excitation means (6, 7) for exciting the resonator body into a vibration at the operating frequency (fres). Each beam is adapted for oscillating in a flexural mode at a given flexural wavelength as a result of said vibration of said resonator body at said operating frequency (fres). Each leg is acoustically long with respect to said flexural wavelength of the beam.

Abstract translation: MEMS谐振器，包括：基板; 谐振器体（1），其通过夹紧的梁（4）悬挂在基板上方，每个梁包括具有与谐振器主体的共同连接（5）的两个支撑腿（41,42），谐振器主体（1） 适于以工作频率（fres）谐振; 激励装置（6,7），用于将谐振器体激发成工作频率（fres）的振动。 作为所述谐振器本体在所述工作频率（fres）下的所述振动的结果，每个光束适于以给定弯曲波长的弯曲模式振荡。 相对于梁的所述弯曲波长，每条腿在声学上是长的。

公开(公告)号：EP3686924A1

公开(公告)日：2020-07-29

申请号：EP19153573.1

申请日：2019-01-24

Applicant: IMEC vzw

Inventor： Stoffels, Steve ,  Decoutere, Stefaan

IPC: H01L21/8252 ,  H01L27/06 ,  H01L27/088 ,  H01L29/20 ,  H01L21/8234

Abstract: A vertical power device having a top side and a bottom side, the vertical power device comprising a substrate; a layered group III-Nitride based device stack formed atop the substrate, the group III-Nitride based device stack; a first vertical group III-Nitride based device and a second vertical group III-Nitride based device formed in the group III-Nitride based device stack, wherein the first vertical group III-Nitride based device and the second vertical group III-Nitride based device are electrically connected; and a first vertical device isolation structure that isolates the first vertical group III-Nitride based device from the second vertical group III-Nitride based device. A vertical power system integrating vertical power devices. A process for fabricating a vertical power device.

公开(公告)号：EP3813096A1

公开(公告)日：2021-04-28

申请号：EP19204534.2

申请日：2019-10-22

Applicant: Imec VZW

Inventor： Stoffels, Steve ,  Liang, Hu

IPC: H01L21/20 ,  H01L21/306 ,  H01L21/308

Abstract: The present disclosure relates to a method for manufacturing an III-nitride semiconductor structure comprising providing a substrate (150) comprising a first layer (333) having an upper surface (51, 65) of monocrystalline III-nitride material,; providing, over the upper surface, a patterned dielectric layer comprising a first dielectric feature (10); loading the substrate into a process chamber; exposing the substrate (150) to a first gas mixture comprising at least one Group III-metal organic precursor gas, a nitrogen containing gas and hydrogen gas at a predetermined temperature, thereby forming, on the upper surface, a second layer (52, 61) of a monocrystalline III-nitride material by area selective growth wherein two opposing sidewalls of the dielectric feature are oriented parallel to one of the {11-20} crystal planes of the first layer such that upon formation of the second layer of the monocrystalline III-nitride material a first trench (81) having tapered sidewalls (82)is formed so that the crystal plane of the second layer parallel to the tapered sidewalls is one of the {1-101} crystal planes.

公开(公告)号：EP3217433A1

公开(公告)日：2017-09-13

申请号：EP17159548.1

申请日：2017-03-07

Applicant: IMEC vzw

Inventor： Stoffels, Steve ,  Saripalli, Yoganand

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/10 ,  H01L29/207 ,  H01L29/423 ,  H01L29/20

CPC classification number: H01L29/0634 ,  H01L21/2258 ,  H01L21/28575 ,  H01L21/30612 ,  H01L21/3245 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/861

Abstract: The invention is related to a III-Nitride semiconductor device comprising a base substrate (1), a buffer layer (2), a channel layer (3), a barrier layer (4) so that a 2-dimensional charge carrier gas (5) is formed or can be formed near the interface between the channel layer (3) and the barrier layer (4), and at least one set of a first and second electrode (6,7) in electrical contact with the 2-dimensional charge carrier gas (5), wherein the device further comprises a mobile charge layer (MCL) (11) within the buffer layer (2) or near the interface between the buffer layer (2) and the channel layer, when the device is in the on-state. The device further comprises (3) an electrically conductive path (12) between one of the electrodes (6,7) and the mobile charge layer (11). The invention is equally related to a method for producing a device according to the invention.

Abstract translation: 本发明涉及包括基础衬底（1），缓冲层（2），沟道层（3），阻挡层（4）的III族氮化物半导体器件，从而使得二维电荷载体气体 ）形成或可形成在沟道层（3）与阻挡层（4）之间的界面附近，并且至少一组第一和第二电极（6,7）与二维电荷 （5），其中所述器件进一步包括在所述器件处于所述缓冲层（2）内时或在所述缓冲层（2）与所述沟道层之间的界面附近的移动电荷层（MCL） 导通状态。 该装置还包括（3）电极（6,7）中的一个与移动电荷层（11）之间的导电路径（12）。 本发明同样涉及用于制造根据本发明的装置的方法。

公开(公告)号：EP2348633A1

公开(公告)日：2011-07-27

申请号：EP11151680.3

申请日：2011-01-21

Applicant: IMEC

Inventor： Stoffels, Steve ,  Tilmans, Hendrikus

IPC: H03H9/02

CPC classification number: H03H9/02448

Abstract: The invention relates to a device comprising a MEM resonating element (20), provided for resonating at a predetermined resonance frequency and having at least one temperature dependent characteristic, a heating means (40), comprising a tunable thermal radiation source (40) for heating the MEM resonating element to an offset temperature (T offset ), a sensing means (11, 12), associated with the MEM resonating element and provided for sensing its temperature dependent characteristic, and a control circuit (30), connected to the sensing means (11, 12) for receiving measurement signals indicative of the sensed temperature dependent characteristic and connected to the heating means (40) for supplying a control signal (31) thereto, to maintain the temperature of the MEM resonating element (20) at the offset temperature.

Abstract translation: 本发明涉及一种装置，包括一个用于以预定谐振频率谐振并具有至少一个温度依赖特性的MEM谐振元件（20），一个加热装置（40），包括一个用于加热的可调热辐射源（40） 将所述MEM谐振元件设置到偏移温度（T offset），与所述MEM谐振元件相关联并被提供用于感测其温度依赖特性的感测装置（11,12）以及连接到所述感测装置的控制电路（30） （11,12），用于接收指示感测到的温度依赖特性的测量信号，并连接到用于向其提供控制信号（31）的加热装置（40），以将MEM谐振元件（20）的温度保持在偏移 温度。