公开(公告)号：WO2019180202A1

公开(公告)日：2019-09-26

申请号：PCT/EP2019/057240

申请日：2019-03-22

Applicant: IMEC VZW

Inventor： STAKENBORG, Tim ,  CHEN, Chang ,  COVENS, Kris ,  CAI, Qing ,  FAUVART, Maarten

IPC: B01L7/00 ,  C12Q1/6869

Abstract: The present invention relates to a method for writing data comprising a sequence of bits, the data being written in a form of nucleic acid, by in-vitro enzymatically producing memory nucleic acid from a strand of memory writing substrate nucleic acid, wherein the strand of memory writing substrate nucleic acid comprises a plurality of spacer sections and memory writing sections sandwiched between the spacer sections. Each of the spacer sections comprises one or more nucleobases, and each of the memory writing sections comprises a nucleobase other than the nucleobases of an adjacent spacer section upstream of the memory writing section in a travel direction of an enzyme along the strand of memory writing substrate nucleic acid. The method comprising: repeating of: synthesising, in liquid medium comprising the strand of memory writing substrate nucleic acid contacted with the enzyme, a spacer portion of the memory nucleic acid from a spacer section by the enzyme by contacting with a solution of spacer nucleotides compatible with the nucleobases of the spacer section; halting the synthesising of the spacer portion in a position where the enzyme is reaching the memory writing section resulting from incompatibility between spacer nucleotides and nucleobases of the portion of the memory nucleic acid from the memory writing section; receiving a sub-sequence of the sequence of bits, said sub-sequence comprising at least one bit; selecting a memory nucleotide compatible with the nucleobase of the memory writing section, and comprising a first label or first modification, on a condition that said sub-sequence comprises a predetermined first sequence of bit-values, and selecting a memory nucleotide compatible with the nucleobase of the memory writing section, and comprising a second label or second modification, on a condition that said sub-sequence comprises a predetermined second sequence of bit-values; and subsequent to the halting, synthesising, in the liquid medium comprising the strand of memory writing substrate nucleic acid contacted with the enzyme, a memory portion of the memory nucleic acid from the memory writing section by the enzyme by contacting the enzyme with a solution of the selected memory nucleotide.

公开(公告)号：WO2019120642A1

公开(公告)日：2019-06-27

申请号：PCT/EP2018/070007

申请日：2018-07-24

Applicant: IMEC VZW

Inventor： CHEN, Chang ,  MARTENS, Koen ,  VAN DORPE, Pol ,  SEVERI, Simone

IPC: G01N33/487 ,  G01N27/414

Abstract: In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.

公开(公告)号：EP3536660A1

公开(公告)日：2019-09-11

申请号：EP18159987.9

申请日：2018-03-05

Applicant: IMEC vzw

Inventor： CHAN, Boon Teik ,  TAO, Zheng ,  DE MARNEFFE, Jean-Francois ,  CHEN, Chang

IPC: B81C1/00 ,  B82Y40/00 ,  G01N33/487

Abstract: According to an aspect of the present inventive concept there is provided a method for forming a nanopore (10) in a semiconductor fin (20). The method comprises the steps of providing (S10) a fin structure (100) comprising at least a bottom layer (110) and a top layer (120), pattering (S20) the top layer to form a pillar (122), laterally embedding (S30) the pillar in a filler material (130), forming (S40) an aperture (140) in the filler material by removing the pillar, and forming (S50) the nanopore (10) in the bottom layer by etching through the aperture.

公开(公告)号：EP3502688B1

公开(公告)日：2019-11-13

申请号：EP17210422.6

申请日：2017-12-22

Applicant: IMEC vzw

Inventor： CHEN, Chang ,  MARTENS, Koen ,  VAN DORPE, Pol ,  SEVERI, Simone

IPC: G01N33/487

公开(公告)号：EP3506135A1

公开(公告)日：2019-07-03

申请号：EP17211093.4

申请日：2017-12-29

Applicant: IMEC vzw

Inventor： STAKENBORG, Tim ,  CHEN, Chang ,  COVENS, Kris ,  CAI, Qing ,  FAUVART, Maarten

IPC: G06F19/22 ,  B82Y10/00 ,  G06N3/12

Abstract: The present disclosure relates to method for writing data comprising a sequence of bits, the data being written in a form of DNA, by in-vitro enzymatically producing memory DNA from a strand of memory writing substrate DNA. The method comprises: repeating of: receiving a sub-sequence of the sequence of bits, said sub-sequence comprising at least one bit; selecting memory nucleotides based on said sub-sequence; contacting, in liquid medium comprising the strand of memory writing substrate DNA contacted with an enzyme, the selected memory nucleotides and the enzyme; and synthesising a portion of the memory DNA from a portion of the strand of memory writing substrate DNA by the enzyme and at least one of the memory nucleotides of the solution, thereby producing memory DNA comprising memory nucleotides corresponding to bits of the sequence of bits. The invention further relates to a micro-fluidic system comprising a microfluidic chip and a controller.

公开(公告)号：EP3768429A1

公开(公告)日：2021-01-27

申请号：EP19711383.0

申请日：2019-03-22

Applicant: Imec VZW

Inventor： STAKENBORG, Tim ,  CHEN, Chang ,  COVENS, Kris ,  CAI, Qing ,  FAUVART, Maarten

IPC: B01L7/00 ,  C12Q1/6869

公开(公告)号：EP3502688A1

公开(公告)日：2019-06-26

申请号：EP17210422.6

申请日：2017-12-22

Applicant: IMEC vzw

Inventor： CHEN, Chang ,  MARTENS, Koen ,  VAN DORPE, Pol ,  SEVERI, Simone

IPC: G01N33/487

Abstract: In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising
i. a source region (310) and a drain region (320), defining a source-drain axis;
ii. a channel region (330) between the source region (310) and the drain region (320);
iii. a nanopore (400) through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.