公开(公告)号：WO2019121931A1

公开(公告)日：2019-06-27

申请号：PCT/EP2018/085864

申请日：2018-12-19

Applicant: IMEC VZW

Inventor： HUMBERT, Aurelie ,  SEVERI, Simone

IPC: G01N27/414 ,  H01L21/762

CPC classification number: G01N27/4145 ,  G01N27/4146 ,  H01L21/76251

Abstract: According to an aspect of the present inventive concept there is provided a method for manufacturing a fluid sensor device comprising: bonding a silicon-on-insulator arrangement comprising a silicon wafer, a buried oxide, a silicon layer, and a first dielectric layer, to a CMOS arrangement comprising a metallization layer and a planarized dielectric layer, wherein the bonding is performed via the first dielectric layer and the planarized dielectric layer; forming a fin-FET arrangement in the silicon layer, wherein the fin-FET arrangement is configured to function as a fluid sensitive fin-FET arrangement; removing the buried oxide and the silicon wafer; forming a contact to the metallization layer and the fin-FET arrangement, wherein the contact comprises an interconnecting structure configured to interconnect the metallization layer and the fin-FET arrangement; forming a channel comprising an inlet and an outlet, wherein the channel is configured to allow a fluid comprising an analyte to contact the fin-FET arrangement.

公开(公告)号：WO2017075428A1

公开(公告)日：2017-05-04

申请号：PCT/US2016/059435

申请日：2016-10-28

Applicant: PACIFIC BIOSCIENCES OF CALIFORNIA, INC. ,  IMEC VZW

Inventor： SAXENA, Ravi ,  GROT, Annette ,  TACK, Nicolaas ,  GONZALEZ, Pilar ,  DU BOIS, Bert ,  SEVERI, Simone

IPC: G01N21/64 ,  F21V9/16 ,  G01N21/00 ,  G01N23/00

CPC classification number: C12Q1/6874 ,  G01N21/6454 ,  G01N21/648 ,  G01N2021/6419 ,  G01N2021/6421 ,  G01N2021/6463 ,  G01N2021/6471 ,  G02B3/0006 ,  G02B5/1819 ,  G02B5/201 ,  G02B5/288 ,  G02B27/0944

Abstract: Arrays of integrated optical devices and their methods for production are provided. The devices include an integrated bandpass filter layer that comprises at least two multi-cavity filter elements with different central bandpass wavelengths. The device arrays are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The devices provide for the efficient and reliable coupling of optical excitation energy from an optical source to the optical reactions. Optical signals emitted from the reactions can thus be measured with high sensitivity and discrimination. The device arrays are well suited for miniaturization and high throughput.

Abstract translation: 提供集成光学器件阵列及其生产方法。 这些器件包括集成带通滤波器层，其包括具有不同中心带通波长的至少两个多腔滤波器元件。 器件阵列可用于高密度分析大量高度多路复用的光学反应，包括生物化学反应，如核酸测序反应。 这些设备提供了从光源到光学反应的光激发能量的高效可靠的耦合。 因此可以用高灵敏度和辨别度来测量从反应中发出的光信号。 器件阵列非常适合小型化和高吞吐量。

公开(公告)号：WO2019120642A1

公开(公告)日：2019-06-27

申请号：PCT/EP2018/070007

申请日：2018-07-24

Applicant: IMEC VZW

Inventor： CHEN, Chang ,  MARTENS, Koen ,  VAN DORPE, Pol ,  SEVERI, Simone

IPC: G01N33/487 ,  G01N27/414

Abstract: In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.

公开(公告)号：WO2015177373A1

公开(公告)日：2015-11-26

申请号：PCT/EP2015/061479

申请日：2015-05-22

Applicant: IMEC VZW

Inventor： VAN DORPE, Pol ,  LAGAE, Liesbet ,  PEUMANS, Peter ,  STASSEN, Andim ,  HELIN, Philippe ,  DU BOIS, Bert ,  SEVERI, Simone

IPC: G01N21/64

CPC classification number: G01N21/6428 ,  G01N21/6454 ,  G01N21/648 ,  G01N21/7703 ,  G01N2201/0873

Abstract: The invention provides an integrated semiconductor device (100) for detecting fluorescent tags, comprising a first layer (101) comprising a detector element (107), a second layer (102) located on top of the first layer (101) and comprising a rejection filter, a third layer (103) located on top of the second layer (102) and being fabricated from a dielectric material, a fourth layer (104) located on top of the third layer (103) and comprising an optical waveguide, and furthermore a fifth layer located on top of the fourth layer comprising a microfluidic channel (106). The optical waveguide is configured and positioned such that the micro-fluidic channel (106) is illuminated with an evanescent tail of excitation light guided by the optical waveguide. The rejection filter is positioned such that fluorescence from activated fluorescent tags present on top of the fourth layer (104) is filtered before falling onto the detector element (107). The rejection filter is configured to reject the wavelength range of the excitation light and configured to transmit the wavelength range of fluorescence from the activated fluorescent tags towards the detector element (107).

Abstract translation: 本发明提供了一种用于检测荧光标签的集成半导体器件（100），包括：第一层（101），包括检测器元件（107），位于第一层（101）顶部的第二层（102） 过滤器，位于第二层（102）的顶部并由电介质材料制成的第三层（103），位于第三层（103）的顶部上并包括光波导的第四层（104），此外 位于第四层顶部的第五层包括微流体通道（106）。 光波导被配置和定位成使得微流体通道（106）被由光波导引导的激发光的渐逝尾部照亮。 排斥滤光器被定位成使得存在于第四层（104）的顶部上的来自活化荧光标签的荧光在落到检测器元件（107）之前被过滤。 拒绝滤波器被配置为拒绝激发光的波长范围并且被配置为将荧光的波长范围从激活的荧光标签朝向检测器元件（107）传输。

公开(公告)号：EP3885042A1

公开(公告)日：2021-09-29

申请号：EP20165314.4

申请日：2020-03-24

Applicant: Imec VZW

Inventor： FIORENTINO, Giuseppe ,  HUMBERT, Aurelie ,  SEVERI, Simone ,  JONES, Benjamin

IPC: B01L3/00 ,  B81C1/00 ,  A61K9/00

Abstract: A method for fabricating a microfluidic device, comprising:
a. Providing an assembly comprising:
i. a first silicon substrate having a hydrophilic silicon oxide top surface comprising a microfluidic channel,
ii. a second silicon substrate, having a hydrophilic silicon oxide bottom surface directly bonded on the top surface of the first silicon substrate, and comprising fluidic access holes giving fluidic access to the microfluidic channel, and

b. Exposing the assembly to oxidative species comprising one or more oxygen atoms and to heat so as to form silicon oxide at a surface of the access holes and of the microfluidic channel.

公开(公告)号：EP3146312A1

公开(公告)日：2017-03-29

申请号：EP15724643.0

申请日：2015-05-22

Applicant: IMEC vzw

Inventor： VAN DORPE, Pol ,  LAGAE, Liesbet ,  PEUMANS, Peter ,  STASSEN, Andim ,  HELIN, Philippe ,  DU BOIS, Bert ,  SEVERI, Simone

IPC: G01N21/64

CPC classification number: G01N21/6428 ,  G01N21/6454 ,  G01N21/648 ,  G01N21/7703 ,  G01N2201/0873

Abstract: The present disclosure relates to semiconductor devices for detecting fluorescent particles. At least one embodiment relates to an integrated semiconductor device for detecting fluorescent tags. The device includes a first layer, a second layer, a third layer, a fourth layer, and a fifth layer. The first layer includes a detector element. The second layer includes a rejection filter. The third layer is fabricated from dielectric material. The fourth layer is an optical waveguide configured and positioned such that a top surface of the fourth layer is illuminated with an evanescent tail of excitation light guided by the optical waveguide when the fluorescent tags are present. The fifth layer includes a microfluidic channel. The optical waveguide is configured and positioned such that the microfluidic channel is illuminated with the evanescent tail. The detector element is positioned such that light from activated fluorescent tags can be received.

Abstract translation: 本公开涉及用于检测荧光颗粒的半导体器件。 至少一个实施例涉及用于检测荧光标签的集成半导体器件。 该装置包括第一层，第二层，第三层，第四层和第五层。 第一层包括检测器元件。 第二层包括拒绝滤波器。 第三层由介电材料制成。 第四层是配置和定位的光波导，当存在荧光标签时，第四层的顶表面被由光波导引导的激发光的渐逝尾部照亮。 第五层包括微流体通道。 光波导被配置和定位成使得微流体通道被渐逝尾部照亮。 检测器元件被定位成使得能够接收来自激活的荧光标签的光。

公开(公告)号：EP3502688A1

公开(公告)日：2019-06-26

申请号：EP17210422.6

申请日：2017-12-22

Applicant: IMEC vzw

Inventor： CHEN, Chang ,  MARTENS, Koen ,  VAN DORPE, Pol ,  SEVERI, Simone

IPC: G01N33/487

Abstract: In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising
i. a source region (310) and a drain region (320), defining a source-drain axis;
ii. a channel region (330) between the source region (310) and the drain region (320);
iii. a nanopore (400) through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.

公开(公告)号：EP3502682A1

公开(公告)日：2019-06-26

申请号：EP17210420.0

申请日：2017-12-22

Applicant: IMEC vzw

Inventor： HUMBERT, Aurelie ,  SEVERI, Simone

IPC: G01N27/414 ,  H01L21/762

Abstract: According to an aspect of the present inventive concept there is provided a method for manufacturing a fluid sensor device comprising: bonding a silicon-on-insulator arrangement comprising a silicon wafer, a buried oxide, a silicon layer, and a first dielectric layer, to a CMOS arrangement comprising a metallization layer and a planarized dielectric layer, wherein the bonding is performed via the first dielectric layer and the planarized dielectric layer; forming a fin-FET arrangement in the silicon layer, wherein the fin-FET arrangement is configured to function as a fluid sensitive fin-FET arrangement; removing the buried oxide and the silicon wafer; forming a contact to the metallization layer and the fin-FET arrangement, wherein the contact comprises an interconnecting structure configured to interconnect the metallization layer and the fin-FET arrangement; forming a channel comprising an inlet and an outlet, wherein the channel is configured to allow a fluid comprising an analyte to contact the fin-FET arrangement.

公开(公告)号：EP2805199A2

公开(公告)日：2014-11-26

申请号：EP13704724.7

申请日：2013-01-18

Applicant: IMEC VZW

Inventor： JAYAPALA, Murali ,  VAN DER PLAS, Geert ,  ROCHUS, Veronique ,  ROTTENBERG, Xavier ,  SEVERI, Simone

IPC: G02B26/08

CPC classification number: G02B26/0833 ,  G02B5/08 ,  G02B7/182 ,  G02B17/0896 ,  G02B26/08 ,  G02B26/0825 ,  G02B26/0841 ,  G02B27/10 ,  H04N13/322 ,  H04N13/365

Abstract: Micro-mirror arrays configured for use in a variable focal length lens are described herein. An example variable focal length lens comprises a micro-mirror array having a plurality of micro-mirror elements arranged in at least a first section and a second section. Each micro-mirror element has a tilt axis and comprises, on each of two opposing sides of the tilt axis, (i) at least one actuation electrode, (ii) at least one measurement electrode, and (iii) at least one stopper. Additionally, each micro-mirror element in the first section has a first tilt angle range, and each micro-mirror element in the second section has a second tilt angle range, with the first tilt angle range being less than the second tilt angle range.

公开(公告)号：EP4075131A1

公开(公告)日：2022-10-19

申请号：EP21168769.4

申请日：2021-04-16

Applicant: Imec VZW

Inventor： BARGE, David ,  DU BOIS, Bert ,  SEVERI, Simone ,  RAY CHAUDHURI, Ashesh

IPC: G01N33/487 ,  B81C1/00 ,  B82Y15/00

Abstract: Method for forming a nanopore transistor, comprising:
a. Forming an aperture in a filler material by:
i. providing a fin comprising a semiconductor layer and a top layer;
ii. pattering the top layer to form a pillar;
iii. embedding the pillar in a filler material;
iv. removing the pillar, leaving an aperture;
v. lining the aperture with a spacer material;

b. forming a nanopore by etching through the aperture,
c. Lining the nanopore with a dielectric,
d. Forming a source and a drain by either:
i. Between steps a.ii. and a.iii., doping the bottom semiconductor layer by using the pillar as a mask, or
ii. After step c.,
- filling the aperture with a sealing material, thereby forming a post;
- removing the filler material;
- doping the bottom semiconductor layer by using the post as a mask; and
- removing the sealing material.