公开(公告)号：WO2009117451A1

公开(公告)日：2009-09-24

申请号：PCT/US2009/037443

申请日：2009-03-17

Applicant: IMRA AMERICA, INC. ,  SHAH, Lawrence ,  CHO, Gyu, Cheon ,  XU, Jingzhou

Inventor： SHAH, Lawrence ,  CHO, Gyu, Cheon ,  XU, Jingzhou

IPC: B23K26/06 ,  B23K26/38

CPC classification number: H01L21/268 ,  B23K26/0624 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/082 ,  B23K26/083 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50

Abstract: Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse repetition rate sufficiently high so that material is efficiently removed from the region and a quantity of unwanted material within the region, proximate to the region, or both is reduced relative to a quantity obtainable at a lower repetition rate In at least one embodiment, an ultrashort pulse laser system may include at least one of a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a semiconductor substrate. Workpiece materials may also include metals, inorganic or organic dielectrics, or any material to be micromachined with femtosecond and/or picosecond pulses, and in some embodiments with pulse widths up to a few nanoseconds.

Abstract translation: 各种实施例可以用于对工件的目标材料进行基于激光的修改，同时有利地实现处理生产量和/或质量的改善。 处理方法的实施例可以包括将激光脉冲聚焦并以足够高的脉冲重复频率将激光脉冲引导到工件的区域，使得材料有效地从该区域移除并且在该区域内靠近该区域的一些不想要的材料， 或者两者相对于以较低重复率可获得的量而减小。在至少一个实施例中，超短脉冲激光系统可以包括光纤放大器或光纤激光器中的至少一个。 各种实施例适合于在半导体衬底上或半导体衬底内的切割，切割，划线和形成特征中的至少一个。 工件材料还可以包括金属，无机或有机电介质，或用飞秒和/或皮秒脉冲微加工的任何材料，在一些实施例中，脉冲宽度可达几纳秒。

公开(公告)号：WO2011123205A1

公开(公告)日：2011-10-06

申请号：PCT/US2011/026501

申请日：2011-02-28

Applicant: IMRA AMERICA, INC. ,  XU, Jingzhou ,  SOHN, Jin, Young ,  CHO, Gyu, Cheon ,  SHAH, Lawrence

Inventor： XU, Jingzhou ,  SOHN, Jin, Young ,  CHO, Gyu, Cheon ,  SHAH, Lawrence

IPC: B23K26/00

CPC classification number: B23K26/00 ,  Y02P40/57

Abstract: Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse width sufficiently short so that material is efficiently removed by nonlinear optical absorption from the region and a quantity of heat affected zone and thermal stress on the material within the region, proximate to the region, or both is reduced relative to a quantity obtainable using a laser with longer pulses. In at least one embodiment, an ultrashort pulse laser system may include at least one of a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a composite material.

Abstract translation: 各种实施例可以用于对工件的目标材料进行基于激光的修改，同时有利地实现处理生产量和/或质量的改善。 处理方法的实施例可以包括将激光脉冲聚焦并且以足够短的脉冲宽度将激光脉冲引导到工件的区域，使得通过来自该区域的非线性光学吸收和一定数量的热影响区和热应力有效地去除材料 区域内的材料，邻近区域或两者都相对于使用具有较长脉冲的激光可获得的量减少。 在至少一个实施例中，超短脉冲激光系统可以包括光纤放大器或光纤激光器中的至少一个。 各种实施例适合于在复合材料上或复合材料内的切割，切割，划线和成形特征中的至少一个。

公开(公告)号：WO2019023015A1

公开(公告)日：2019-01-31

申请号：PCT/US2018/042654

申请日：2018-07-18

Applicant: IMRA AMERICA, INC.

Inventor： XU, Jingzhou ,  HORI, Takashi ,  SUZUKI, Shigeru ,  CHO, Gyu, Cheon

IPC: H01S3/00 ,  H01S3/23

Abstract: Chirped pulse amplification (CPA) systems configured to generate and amplify multi-pulses are described. The nonlinear interaction of pulses can generate a multiple pulse pack with a dense time separation between pulses. Reducing or eliminating the nonlinear interaction can be provided by spectrally and/or temporally splitting pulses in the chirped amplification system.

公开(公告)号：WO2013106164A1

公开(公告)日：2013-07-18

申请号：PCT/US2012/069825

申请日：2012-12-14

Applicant: IMRA AMERICA, INC.

Inventor： ARAI, Alan, Y. ,  CHO, Gyu, Cheon ,  XU, Jingzhou

IPC: H01S3/30

CPC classification number: H01L21/67092 ,  B23K26/0006 ,  B23K26/0057 ,  B23K26/40 ,  B23K2203/16 ,  B23K2203/172 ,  H01L21/2686 ,  H01L21/78 ,  H01L33/0095 ,  Y10S438/94

Abstract: Examples of methods and systems for laser processing of materials are disclosed. Methods and systems for singulation of a wafer comprising a coated substrate can utilize a laser outputting light that has a wavelength that is transparent to the wafer substrate but which may not be transparent to the coating layer(s). Using techniques for managing fluence and focal condition of the laser beam, the coating layer(s) and the substrate material can be processed through ablation and internal modification, respectively. The internal modification can result in die separation.

Abstract translation: 公开了激光加工材料的方法和系统的实例。 用于单片化包括涂覆的基底的晶片的方法和系统可以利用激光输出具有对于晶片衬底是透明的但对涂层不透明的波长的光。 使用技术来管理激光束的注量和聚焦条件，涂层和基材可分别通过烧蚀和内部修饰进行处理。 内部修改可导致管芯分离。

公开(公告)号：EP2252426A1

公开(公告)日：2010-11-24

申请号：EP09721791.3

申请日：2009-03-17

Applicant: Imra America, Inc.

Inventor： SHAH, Lawrence ,  CHO, Gyu, Cheon ,  XU, Jingzhou

IPC: B23K26/06 ,  B23K26/38

CPC classification number: H01L21/268 ,  B23K26/0624 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/082 ,  B23K26/083 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50

Abstract: Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse repetition rate sufficiently high so that material is efficiently removed from the region and a quantity of unwanted material within the region, proximate to the region, or both is reduced relative to a quantity obtainable at a lower repetition rate In at least one embodiment, an ultrashort pulse laser system may include at least one of a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a semiconductor substrate. Workpiece materials may also include metals, inorganic or organic dielectrics, or any material to be micromachined with femtosecond and/or picosecond pulses, and in some embodiments with pulse widths up to a few nanoseconds.

Abstract translation: 各种实施例可以用于对工件的目标材料的基于激光的修改，同时有利地实现处理生产量和/或质量的改善。 处理方法的实施例可以包括将激光脉冲聚焦并以足够高的脉冲重复频率将激光脉冲引导到工件的区域，使得材料从该区域有效地移除，并且在区域内靠近该区域的一些不需要的材料， 或者两者相对于以较低重复率可获得的量减少。 超短脉冲激光系统的实施例可以包括光纤放大器或光纤激光器。 各种实施例适合于在半导体衬底上或半导体衬底内的切割，切割，划线和形成特征中的至少一个。 工件材料可以包括金属，无机或有机电介质，或者用飞秒，皮秒和/或纳秒脉冲微加工的任何材料。