公开(公告)号：JP2000164508A

公开(公告)日：2000-06-16

申请号：JP29123799

申请日：1999-10-13

Applicant: IMS IONEN MIKROFAB SYST

Inventor： BUSCHBECK HERBERT ,  CHALUPKA ALFRED DR ,  LAMMER GERTRAUD ,  LOESCHNER HANS DR ,  STENGL GERHARD DR

IPC: H01J37/305 ,  G03F1/20 ,  G03F7/20 ,  H01J37/12 ,  H01J37/317 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To improve the image forming characteristics of a particle/optical image forming device for lithography, and to obtain lower resolution. SOLUTION: A particle/optical image forming device for lithography is provided with an irradiating unit (BS), having a particle feeding source (QL) for generating particle beams (ts) and a first electrostatic lens system, a mask- holding device (MH) for arranging a mask (MF) in the path of the particle beams (ts), a projecting unit (PS) having a second electrostatic lens system (PL) for forming the image of the pattern of the mask (MF) on a substrate (SB) face along the optical axis. A second electrostatic lens,system is provided with a post-mask electrode(NE) at one side of a mask holding device (MH), and different electrostatic potentials are impressed to the post mask electrode (NE) and the mask (MF). Also, the first electrostatic lens system is provided with a pre-mask electrode (VE) in addition to the mask holding device (MH), and a potential which is at least different from the potential of the mask (MF) is applied to the pre-mask electrode (VE).

公开(公告)号：JPH10149794A

公开(公告)日：1998-06-02

申请号：JP24037797

申请日：1997-08-20

Applicant: IMS IONEN MIKROFAB SYST

Inventor： BUSCHBECK HERBERT ,  CHALUPKA ALFRED ,  LOESCHNER HANS ,  STENGL GERHARD ,  VONACH HERBERT

IPC: G03F7/20 ,  H01J37/12 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To optimize the applying electrical potential of each electrode so as to compensate a high level transfer error between different lenses, and to improve the transferring characteristic by providing a means for focusing particle beams with an electrode device, which includes at least one electrostatic focus lens coupled with an electrostatic diverging lens. SOLUTION: A projection lithography device 1 is formed of a particle source 2 having a an apparent particle source dimension formed as small as possible, and an extracting system 3 for accelerating the particles, which are flowed out of the particle source 2, so as to give the initial energy. An image point of the particle source 2 is provided with an incidence throttle 5 for an electrode device 6, and the electrode device 6 is provided over from the incidence throttle 5 to a mask 7. Route of the particles beams, which are emitted for spattering from the image of the particle source 2, can be formed in parallel with each other, restricting the generation of error as small as possible, and the beams are directed to a board 8 by providing the electrode device 6 with a combination of at least one electrostatic focus lens and at least one electrostatic diverging lens.

公开(公告)号：JP2000035674A

公开(公告)日：2000-02-02

申请号：JP16430299

申请日：1999-05-06

Applicant: IMS IONEN MIKROFAB SYST

Inventor： BUSCHBECK HERBERT ,  CHALUPKA ALFRED DR ,  HAUGENEDER ERNST ,  LAMMER GERTRAUD ,  LOESCHNER HANS DR

IPC: H01L21/027 ,  G03F1/20 ,  G03F7/20 ,  H01J37/09 ,  H01J37/317 ,  G03F7/22

Abstract: PROBLEM TO BE SOLVED: To provide a particle beam lithography method for forming the images of structural patterns to one or plural fields on a substrate by charged particles, for example, ions. SOLUTION: The particle beams are shaped to a desired beam pattern by masks arranged within the particle beams and are converted to the beam patterns by the openings in the mask. These beam patterns are projected onto the substrate to form the images of the mask openings. The plural masks are arranged on one mask carrier and the plural opening patterns used for production of the structural patterns formed on the respective regions S of the substrate are provided according to this invention. The plural patterns formed in such a manner are all coupled and for example, an overall pattern of the die field D of the substrate 11 is formed.

公开(公告)号：DE19734059B4

公开(公告)日：2007-01-11

申请号：DE19734059

申请日：1997-08-06

Applicant: IMS IONEN MIKROFAB SYST

Inventor： BUSCHBECK HERBERT ,  CHALUPKA ALFRED ,  LOESCHNER HANS ,  STENGL GERHARD ,  VONACH HERBERT

IPC: H01J37/30 ,  G03F7/20 ,  H01J37/12 ,  H01J37/305 ,  H01L21/027

公开(公告)号：DE19734059A1

公开(公告)日：1998-02-26

申请号：DE19734059

申请日：1997-08-06

Applicant: IMS IONEN MIKROFAB SYST

Inventor： BUSCHBECK HERBERT ,  CHALUPKA ALFRED ,  LOESCHNER HANS ,  STENGL GERHARD ,  VONACH HERBERT

IPC: G03F7/20 ,  H01J37/12 ,  H01J37/305 ,  H01L21/027 ,  G03F1/16

Abstract: A system for charged particle shadow projection lithography of mask structures directly onto a substrate has a particle source, an extraction system which creates a divergent particle beam propagating from a punctiform virtual source, and a system (6) for bundling the divergent particle beam to form a roughly parallel particle beam for illuminating the mask (7) and substrate. The novelty is that the bundling system (6) has an electrode arrangement (6a-h) including at least one electrostatic convergent lens (6a-f) combined with an electrostatic divergent lens (6g, h), the divergent lens preferably being positioned at a distance behind the convergent lens in the beam direction.

公开(公告)号：GB2338084B

公开(公告)日：2001-12-19

申请号：GB9909958

申请日：1999-04-29

Applicant: IMS IONEN MIKROFAB SYST

Inventor： BUSCHBECK HERBERT ,  CHALUPKA ALFRED ,  HAUGENEDER ERNST ,  LAMMER GERTRAUD ,  LOECHNER HANS

IPC: H01L21/027 ,  G03F1/20 ,  G03F7/20 ,  H01J37/09 ,  H01J37/317 ,  G03F1/14 ,  G03F9/00

公开(公告)号：DE19946447A1

公开(公告)日：2000-04-20

申请号：DE19946447

申请日：1999-09-28

Applicant: IMS IONEN MIKROFAB SYST

Inventor： BUSCHBECK HERBERT ,  LAMMER GETRAUD ,  CHALUPKA ALFRED ,  LOESCHNER HANS ,  STENGL GERHARD

IPC: H01J37/305 ,  G03F1/20 ,  G03F7/20 ,  H01J37/12 ,  H01J37/317 ,  H01L21/027

Abstract: Imaging system has illumination system (QL), mask holder (MH) and projection system arranged along an optical axis. One optical system has a ring electrode and different electrostatic potentials are applied to the ring electrode and mask foil (MF) acting as grid electrode, together forming grid lens with negative refractive index. First lens arrangement (BS) has a ring pre-electrode (VE) on the side facing the mask holder at a different electrical potential from the mask foil to form a grid lens with negative refractive index with the mask foil.

公开(公告)号：GB2338084A

公开(公告)日：1999-12-08

申请号：GB9909958

申请日：1999-04-29

Applicant: IMS IONEN MIKROFAB SYST

Inventor： BUSCHBECK HERBERT ,  CHALUPKA ALFRED ,  HAUGENEDER ERNST ,  LAMMER GERTRAUD ,  LOECHNER HANS

IPC: H01L21/027 ,  G03F1/20 ,  G03F7/20 ,  H01J37/09 ,  H01J37/317 ,  G03F1/14 ,  G03F9/00

Abstract: The mask carrier assembly 6 for particle beam lithography supports a set of separate replaceable masks 12. The masks comprise a mask design field 15 and also reference marks used to align the masks to the substrate 11. Individual mask patterns corresponding to individual sub-fields can be combined on the substrate to give the total design required, and this design can be repeated by step and repeat exposure over the substrate (Fig 2). Different embodiments are described: these include a mask carrier with eight masks (Fig 3), sixteen masks (Fig 4), and masks formed on a single wafer (Figs 5,6). In this last embodiment the single wafer may be placed behind an aperture (32, Fig 10) in a screen (31,Fig 10) allowing any particular mask to be selected. The selected mask and the exposure aperture are aligned using alignment marks present around both the mask (24, Fig 9) and the aperture (34, Fig 10).