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    METHOD FOR CONTROLLING IMAGE PATTERN DISTORTION OF LITHOGRAPHY SYSTEM
    1.
    发明专利
    METHOD FOR CONTROLLING IMAGE PATTERN DISTORTION OF LITHOGRAPHY SYSTEM 审中-公开

    公开(公告)号：JP2002329663A

    公开(公告)日：2002-11-15

    申请号：JP2002071335

    申请日：2002-03-15

    Applicant: IMS IONEN MIKROFAB SYST

    Inventor： CHALUPKA ALFRED DR ,  HAUGENEDER ERNST ,  LAMMER GERTRAUD

    IPC: G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a method for controlling an image lithography distortion caused by a distortion of a mask opening pattern. SOLUTION: A mask 102 containing a mask pattern is plotted on a target 104 by lithography beams 101, 103. In a control image pattern distortion, a plurality of measuring structures 211 are provided as a mask, and are plotted on a measuring device 150. Here, a location of images of the measuring structure is measured. These locations are compared with respective fixed positions, and a plurality of line strengths of which each line strength relates to a position of each mask are calculated by a control unit 200. The position on the mask is heated at each line strength by an irradiation projector containing a radiation device 300 located outside a lithography beam path, and the heating of the masks generates a distortion in a mask pattern by local thermal expansion. A distortion control process is structured so as to repeat in a feedback loop.

    PARTICLE/OPTICAL IMAGE FORMING DEVICE FOR LITHOGRAPHY
    2.
    发明专利
    PARTICLE/OPTICAL IMAGE FORMING DEVICE FOR LITHOGRAPHY 失效

    公开(公告)号：JP2000164508A

    公开(公告)日：2000-06-16

    申请号：JP29123799

    申请日：1999-10-13

    Applicant: IMS IONEN MIKROFAB SYST

    Inventor： BUSCHBECK HERBERT ,  CHALUPKA ALFRED DR ,  LAMMER GERTRAUD ,  LOESCHNER HANS DR ,  STENGL GERHARD DR

    IPC: H01J37/305 ,  G03F1/20 ,  G03F7/20 ,  H01J37/12 ,  H01J37/317 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To improve the image forming characteristics of a particle/optical image forming device for lithography, and to obtain lower resolution. SOLUTION: A particle/optical image forming device for lithography is provided with an irradiating unit (BS), having a particle feeding source (QL) for generating particle beams (ts) and a first electrostatic lens system, a mask- holding device (MH) for arranging a mask (MF) in the path of the particle beams (ts), a projecting unit (PS) having a second electrostatic lens system (PL) for forming the image of the pattern of the mask (MF) on a substrate (SB) face along the optical axis. A second electrostatic lens,system is provided with a post-mask electrode(NE) at one side of a mask holding device (MH), and different electrostatic potentials are impressed to the post mask electrode (NE) and the mask (MF). Also, the first electrostatic lens system is provided with a pre-mask electrode (VE) in addition to the mask holding device (MH), and a potential which is at least different from the potential of the mask (MF) is applied to the pre-mask electrode (VE).

    ELECTROSTATIC LENS WITH ADJUSTING MECHANISM
    3.
    发明专利
    ELECTROSTATIC LENS WITH ADJUSTING MECHANISM 失效

    公开(公告)号：JPH11211897A

    公开(公告)日：1999-08-06

    申请号：JP31440098

    申请日：1998-11-05

    Applicant: IMS IONEN MIKROFAB SYST

    Inventor： CHALUPKA ALFRED DR ,  STENGL GERHARD DR

    IPC: G21K1/087 ,  H01J37/12

    Abstract: PROBLEM TO BE SOLVED: To provide an electrostatic lens capable of adjusting and correcting the electrostatic field after a particle optical system is assembled, particularly after the operation of the optical system is started. SOLUTION: This charged particle beam focusing electrostatic lens is provided with conductor electrodes 2 having a ring-like cross section, at least one electrode 2 is divided into sector parts 4 continuously arranged along the electrode circumference, individual sector parts 4 have peripheral portions corresponding to the prescribed center angle respectively, and the sector parts 4 are electrically connected together. Each sector part 4 is connected to a holder 6 via at least one adjusting tool 5 respectively, and each sector part 4 can be position-adjusted independently of the other sector parts 4 while it is moved by the adjusting tool 5.

    DEVICE (PATTERN-LOCKING SYSTEM) USED IN PARTICLE PROJECTION LITHOGRAPHIC PRINTING SYSTEM IN ALIGNMENT SYSTEM
    4.
    发明专利
    DEVICE (PATTERN-LOCKING SYSTEM) USED IN PARTICLE PROJECTION LITHOGRAPHIC PRINTING SYSTEM IN ALIGNMENT SYSTEM 有权

    公开(公告)号：JP2002175979A

    公开(公告)日：2002-06-21

    申请号：JP2001276043

    申请日：2001-09-12

    Applicant: IMS IONEN MIKROFAB SYST

    Inventor： CHALUPKA ALFRED DR ,  STENGL GERHARD DR ,  LOSCHNER HANS ,  NOWAK ROBERT ,  EDER STEFAN

    IPC: G01B15/00 ,  G03F7/20 ,  H01J37/304 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a method of aligning patterns which enables measurement and adjustment of beam characteristics which are influenced by positions along Z-coordinate axis, i.e., the optical axis. SOLUTION: In a particle projection lithographic printing system, an alignment system is used to determine alignment parameters for measuring the position and shape of an optical image of a structure pattern formed on a mask by a wide particle beam, and at the same time, formed on a target, by means of a device, comprising a plurality of alignment marks 17a and 17b which are so structured as to generate a secondary radiation beam, when irradiated with radial rays of a particle beam. In order to change the alignment parameters along the optical axis, the alignment marks 17a and 17b are positioned outside an aperture 31 of the alignment system for a beam part for generating the optical image, and at the same time, are positioned at such places as being consistent with particle reference beams projected through a reference beam forming structure formed on the mask, while the optical image is projected on the target. The positions of the alignment marks are determined, at at least two different levels above the target, along the direction of each reference beam.

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