公开(公告)号：DE10160458B4

公开(公告)日：2006-10-12

申请号：DE10160458

申请日：2001-11-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  ANTESBERGER GUNTER ,  HEUMANN JAN ,  HENNIG MARIO

IPC: B81C1/00 ,  G03F1/00 ,  G03F7/00

Abstract: Product mask comprises: a quartz layer; and a masking layer on the quartz layer for masking predetermined regions of the quartz layer to project the semiconductor layers. The mask surface has one or more predetermined defects, each of which is masked by a mark on the mask surface. Independent claims are also included for the following: (i) a phase shift mask comprising the above product mask with a number of trenches formed in the quartz layer; and (ii) a process for the production of the phase shift mask. Preferred Features: Each mark comprises a number of markers each assigned a marker type with a predetermined defect parameter. The markers are rectangular and are formed by a quartz protrusion or quartz hole on or in the quartz layer.

公开(公告)号：DE10160458A1

公开(公告)日：2003-06-26

申请号：DE10160458

申请日：2001-11-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  ANTESBERGER GUNTER ,  HEUMANN JAN ,  HENNIG MARIO

IPC: G03F1/00 ,  G03F1/14 ,  B81C1/00 ,  G03F7/00

Abstract: Product mask comprises: a quartz layer; and a masking layer on the quartz layer for masking predetermined regions of the quartz layer to project the semiconductor layers. The mask surface has one or more predetermined defects, each of which is masked by a mark on the mask surface. Independent claims are also included for the following: (i) a phase shift mask comprising the above product mask with a number of trenches formed in the quartz layer; and (ii) a process for the production of the phase shift mask. Preferred Features: Each mark comprises a number of markers each assigned a marker type with a predetermined defect parameter. The markers are rectangular and are formed by a quartz protrusion or quartz hole on or in the quartz layer.