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    Structure for projecting pattern on image surface
    1.
    发明专利
    Structure for projecting pattern on image surface 审中-公开
    用于投影图像图案的结构

    公开(公告)号：JP2006210928A

    公开(公告)日：2006-08-10

    申请号：JP2006019045

    申请日：2006-01-27

    Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

    Inventor： MOUKARA MOLELA ,  PFORR RAINER ,  MUELDERS THOMAS ,  HENNIG MARIO ,  ZEILER KARSTEN

    IPC: H01L21/027 ,  G03F1/00 ,  G03F7/20

    CPC classification number: G03F7/70283 ,  G03F1/30 ,  G03F1/32 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70125

    Abstract: PROBLEM TO BE SOLVED: To provide a structure, capable of simultaneously projecting a periodic line interval plane diffraction grating of a memory cell region and a peripheral structure pattern that is formed intricately. SOLUTION: The quality of image formation, when an image is simultaneously transmitted from a line interval plane diffraction grating and a peripheral structure including MUX row, is improved by using a quadrupole illumination. Four poles 14a to 14d of this quadrupole illumination extend in the longitudinal direction, and the axis 112 of the pole in the longitudinal direction is located vertical, with respect to the row direction of the grating row of a mask. Thus, the contrast of a structure image formation of the line interval planar diffraction grating, MEEF, and a process window can be improved. Meanwhile, the geometrical accuracy of the peripheral structure (particularly, MUX row) is stabilized by an illumination pupil 18, extending over the entire wide depth range of focus. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供能够同时投影存储单元区域的周期性行间隔平面衍射光栅和复杂形成的周边结构图案的结构。 解决方案：通过使用四极照明来改善图像从线间隔平面衍射光栅同时传输的图像形成和包括MUX行的外围结构的质量。 该四极照明的四极14a至14d在纵向方向上延伸，并且杆的纵向方向的轴线112相对于掩模的光栅行的行方向位于垂直方向。 因此，可以提高线间隔平面衍射光栅的结构图像形成的对比度，MEEF和处理窗口。 同时，周边结构（特别是MUX行）的几何精度通过在整个宽的深度聚焦范围上延伸的照明光瞳18而稳定。 版权所有（C）2006，JPO＆NCIPI

    PHOTOLITHOGRAPHIC MASK
    2.
    发明申请
    PHOTOLITHOGRAPHIC MASK 审中-公开
    光刻掩膜

    公开(公告)号：WO0241076A3

    公开(公告)日：2003-01-03

    申请号：PCT/DE0104263

    申请日：2001-11-14

    Applicant: INFINEON TECHNOLOGIES AG ,  GRIESINGER UWE ,  HENNIG MARIO ,  KNOBLOCH JUERGEN ,  PFORR RAINER ,  VORWERK MANUEL

    Inventor： GRIESINGER UWE ,  HENNIG MARIO ,  KNOBLOCH JUERGEN ,  PFORR RAINER ,  VORWERK MANUEL

    IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G03F1/14

    CPC classification number: G03F7/70441 ,  G03F1/29 ,  G03F7/70433

    Abstract: According to the invention, auxiliary openings (2) are allocated to the openings (1) on a mask which are to be transferred onto a wafer. Said auxiliary openings have a phase shifting characteristic of preferably between 160 DEG and 200 DEG in relation to the openings (1), as well as a cross-section which is less than the limit dimension (31) for the printing of the projection device, so that the auxiliary openings (2) themselves cannot be printed onto the wafer. At the same time, however, they strengthen the contrast of the aerial image of an associated insulated or semi-insulated opening (1) on the wafer in particular. According to one form of embodiment, the distance of the auxiliary openings (2) from the opening (1) is greater than the resolution limit of the projection device, the opening being less than the coherence length of the light used for projection. The effect of the auxiliary openings consists of the phase-related use of the optical proximity effect. If the auxiliary openings (2) are arranged in a preferred direction, this effect can be used on quadratic openings (1) on the mask to produce elliptic structures (1') on a wafer. The result is a considerable widening of the process window for the projection of substrate contacting planes onto a wafer.

    Abstract translation: 在掩模上的晶片上要传送开口（1）与辅助开口相关联的（2）。 这些具有优选为160°至200℃底层相移特性相对于所述孔（1）之间，以及一个位于该投影装置的横截面（21）的打印的限制尺寸（31）下方，使得辅助开口（2）本身不将 晶圆是geprintet。 同时提高了空间像的对比度，特别是相关联的晶片上的绝缘或半绝缘的开口（1）。 在一个实施例中，辅助开口（2）具有一个位于上述从开口（1）的投影装置的距离的分辨率极限，但其比用于投影的光的相干长度小。 它们的作用是在光学邻近效应的相位相关的利用率，从而可以在掩模在正方形开口的晶片上产生椭圆结构（1“）设定在一个优选的方向上的辅助开口（2）当被利用（1）。 其结果是在投影，特别Substratkontaktierungsebenen到晶片上的处理窗口的显著放大图。

    PHASE SHIFTING MASK
    3.
    发明申请
    PHASE SHIFTING MASK 审中-公开
    相SLIDE MASK

    公开(公告)号：WO03054627A2

    公开(公告)日：2003-07-03

    申请号：PCT/DE0204321

    申请日：2002-11-25

    Applicant: INFINEON TECHNOLOGIES AG ,  HENNIG MARIO ,  KOEHLE RODERICK ,  KUNKEL GERHARD ,  PFORR RAINER ,  VOIGT INA

    Inventor： HENNIG MARIO ,  KOEHLE RODERICK ,  KUNKEL GERHARD ,  PFORR RAINER ,  VOIGT INA

    IPC: G03F1/00 ,  G03F1/14

    CPC classification number: G03F1/30

    Abstract: The invention relates to a phase shifting mask (8) having symmetrical structures (1, 2) for the production of adjacent pairs (5) of structures (1', 2') on a semiconductor wafer (9), such as pairs of trench capacitors for memory modules, the structures (1, 2) inside the pair having a phase deviation difference of 180 DEG in relation to each other. The dimensions of the structures at the limit of resolution of the lighting system enable the influence of lens aberrations on the difference in line width created between the right and the left to be reduced. The invention also relates to a method for producing the structures (1', 2') on the wafer (9), consisting of a step in which the phase attribution to the right structure (2) or left structure (1) is selected according to the sign of the difference in line width when said difference is measured without phase attribution, using the same lighting system.

    Abstract translation: 在一个相位罩（8）具有对称结构（1，2）用于制备接近半导体晶片（9），在结构上的相互对置的对（5）（1”，2' ），诸如对于具有结构的存储器器件严重电容器对（1，2） 该对对180°的彼此Phasenhubunterschied内。 当躺在由透镜像差的影响的曝光系统结构的尺寸的分辨率极限降低到所得到的左右线宽差。 一种用于结构的晶片（9）的制备（1”，2' ）的过程包括选择（2）或左结构（1），这取决于线的符号宽度差的权利，相位指定的demn步骤的使用时 没有相位分配相同的成像系统被测量。

    4.
    发明专利
    未知

    公开(公告)号：DE10310136B4

    公开(公告)日：2007-05-03

    申请号：DE10310136

    申请日：2003-03-07

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： DETTMANN WOLFGANG ,  HENNIG MARIO ,  PFORR RAINER ,  KOEHLE RODERICK ,  HOFSAES MARKUS ,  THIELE JOERG

    IPC: G03F1/00 ,  G03F7/20

    Abstract: Structure patterns mutually correlated on masks are projected onto the same photosensitive layer (R) on semiconductor wafer (W) in projection system. The first mask (P) contains opaque structure element (25) on first position so that its position projection onto wafer forms not-exposed region of lacquer in photo-sensitive layer. There is at least one second mask (T), allocated to first mask, with semi-transparent region (23') on second position of second mask, coinciding with first position on first mask, whose image on wafer illuminates at least part of lacquer region in photo-sensitive layer. Independent claims are included for method of producing set of several masks.

    5.
    发明专利
    未知

    公开(公告)号：DE102005003905B4

    公开(公告)日：2007-04-12

    申请号：DE102005003905

    申请日：2005-01-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： PFORR RAINER ,  MOUKARA MOLELA ,  MUELDERS THOMAS ,  HENNIG MARIO ,  ZEILER KARSTEN

    IPC: G03F7/20 ,  G03F1/00

    Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

    7.
    发明专利
    未知

    公开(公告)号：DE10160458B4

    公开(公告)日：2006-10-12

    申请号：DE10160458

    申请日：2001-11-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： DETTMANN WOLFGANG ,  ANTESBERGER GUNTER ,  HEUMANN JAN ,  HENNIG MARIO

    IPC: B81C1/00 ,  G03F1/00 ,  G03F7/00

    Abstract: Product mask comprises: a quartz layer; and a masking layer on the quartz layer for masking predetermined regions of the quartz layer to project the semiconductor layers. The mask surface has one or more predetermined defects, each of which is masked by a mark on the mask surface. Independent claims are also included for the following: (i) a phase shift mask comprising the above product mask with a number of trenches formed in the quartz layer; and (ii) a process for the production of the phase shift mask. Preferred Features: Each mark comprises a number of markers each assigned a marker type with a predetermined defect parameter. The markers are rectangular and are formed by a quartz protrusion or quartz hole on or in the quartz layer.

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