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公开(公告)号：DE102005003184A1
公开(公告)日：2006-07-27
申请号：DE102005003184
申请日：2005-01-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor： MOUKARA MOLELA , WINKLER THORSTEN , ZEILER KARSTEN , KOEHLE RODERICK , THIELE JOERG , DETTMANN WOLFGANG , MITTERMEIER ARMELLE BENEDICTE , HENNIG MARIO , KOESTLER WOLFRAM
IPC: G03F1/00 , H01L21/8242
Abstract: The mask has a mask structure (30) in a chromium layer (3), a halftone layer (4) or a glass layer (5) of the tri-tone mask. The structure is surrounded by a strip of the halftone layer with a predetermined width. The strip creates a sharp contrast between a passage from the opaque layer to the glass layer. The width of the strip is constant and parallel to an edge of the structure and amounts between 50 and 200 nanometers. Independent claims are also included for the following: (A) a method of manufacture of a tri-tone mask (B) utilization of a tri-tone mask for the lithographic manufacture of a semiconductor device.
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公开(公告)号：DE10310137A1
公开(公告)日：2004-10-07
申请号：DE10310137
申请日：2003-03-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor： PFORR RAINER , THIELE JOERG , HENNIG MARIO , DETTMANN WOLFGANG , ZEILER KARSTEN
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公开(公告)号：DE102015117172A1
公开(公告)日：2017-04-13
申请号：DE102015117172
申请日：2015-10-08
Applicant: INFINEON TECHNOLOGIES AG
Inventor： DETTMANN WOLFGANG , GRIMMINGER FLORIAN , HERNDL THOMAS , FALLEAU NICOLAS , MATISCHEK RAINER , HOLWEG GERALD , RÖDIG HERBERT
Abstract: Es wird eine Kommunikationsanordnung bereitgestellt, aufweisend: Ein Kommunikationsgerät 130 mit einem Applikationsprozessor 132, einem Mobilfunk-Kommunikationsschaltkreis, und einem Nahfeld-Kommunikationsschaltkreis 134, welcher zur Kommunikation gemäß einer Nahfeld-Kommunikationstechnologie eingerichtet ist. An dem Kommunikationsgerät 130 ist ein lösbarer flexibler Träger 102 angebracht, aufweisend: Einen Funk-Kommunikationsschaltkreis 125 und/oder ein Sensorschaltkreis, einen Nahfeld-Kommunikationsschaltkreis 124 und einen mit dem Nahfeld-Kommunikationsschaltkreis und dem Funk-Kommunikationsschaltkreis und/oder dem Sensorschaltkreis gekoppelten Schaltkreis 136, der eingerichtet ist zur Codierung/Decodierung von Daten.
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公开(公告)号：NL1025016C2
公开(公告)日：2008-06-17
申请号：NL1025016
申请日：2003-12-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor： DETTMANN WOLFGANG , KOEHLE RODERICK , VERBEEK MARTIN
IPC: G03F1/00
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公开(公告)号：NL1025016A1
公开(公告)日：2004-09-09
申请号：NL1025016
申请日：2003-12-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor： DETTMANN WOLFGANG , KOEHLE RODERICK , VERBEEK MARTIN
IPC: G03F1/00
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Patent Agency Ranking
公开(公告)号：DE10245159B4
公开(公告)日：2006-10-12
申请号：DE10245159
申请日：2002-09-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： DETTMANN WOLFGANG , MATHUNI JOSEF , FAGERER OLIVER , SCHIESSL BETTINA , RAHN STEPHEN
Abstract: A mask, especially a photo-mask for semiconductor device production comprises at least a product field region (6a) with a compensation structure outside this which at least comprises an electrically conductive region (8a,b) connected to the product field region, preferably by a rail of breadth especially between 5 and 25 microns. An Independent claim is also included for a mask production process for the above.
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公开(公告)号：DE10310136A1
公开(公告)日：2004-09-16
申请号：DE10310136
申请日：2003-03-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor： DETTMANN WOLFGANG , HENNIG MARIO , PFORR RAINER , KOEHLE RODERICK , HOFSAES MARKUS , THIELE JOERG
Abstract: Structure patterns mutually correlated on masks are projected onto the same photosensitive layer (R) on semiconductor wafer (W) in projection system. The first mask (P) contains opaque structure element (25) on first position so that its position projection onto wafer forms not-exposed region of lacquer in photo-sensitive layer. There is at least one second mask (T), allocated to first mask, with semi-transparent region (23') on second position of second mask, coinciding with first position on first mask, whose image on wafer illuminates at least part of lacquer region in photo-sensitive layer. Independent claims are included for method of producing set of several masks.
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公开(公告)号：DE10258371A1
公开(公告)日：2004-07-08
申请号：DE10258371
申请日：2002-12-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor： KOEHLE RODERICK , DETTMANN WOLFGANG , VERBEEK MARTIN
IPC: G03F1/00
Abstract: Method for inspection of periodic structures on a lithography mask using a microscope with adjustable illumination and a drive for 2D movement of a mechanical stage on which the mask is placed under control of a computer. Position, size and pitch specification of the mask are stored by means of a first image calibration of each array structure of selected locations on the lithography mask, calculation of Fourier coefficients and calculation of a difference image to generate a defect indicating display.
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公开(公告)号：DE10245159A1
公开(公告)日：2004-04-15
申请号：DE10245159
申请日：2002-09-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： DETTMANN WOLFGANG , MATHUNI JOSEF , FAGERER OLIVER , SCHIESSL BETTINA , RAHN STEPHEN
Abstract: A mask, especially a photo-mask for semiconductor device production comprises at least a product field region (6a) with a compensation structure outside this which at least comprises an electrically conductive region (8a,b) connected to the product field region, preferably by a rail of breadth especially between 5 and 25 microns. An Independent claim is also included for a mask production process for the above.
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公开(公告)号：DE102004028849B4
公开(公告)日：2007-07-19
申请号：DE102004028849
申请日：2004-06-15
Applicant: INFINEON TECHNOLOGIES AG
Inventor： NOELSCHER CHRISTOPH , DETTMANN WOLFGANG
IPC: G03F1/00
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