公开(公告)号：WO0211147A2

公开(公告)日：2002-02-07

申请号：PCT/DE0102802

申请日：2001-07-24

Applicant: INFINEON TECHNOLOGIES AG ,  BARTH ROLAND ,  BENEDIX ALEXANDER ,  DUEREGGER REINHARD ,  GROSSE STEPHAN

Inventor： BARTH ROLAND ,  BENEDIX ALEXANDER ,  DUEREGGER REINHARD ,  GROSSE STEPHAN

IPC: H01L27/04 ,  G01K7/01 ,  G11C7/04 ,  G11C11/401 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC classification number: G01K7/01

Abstract: A temperature sensor (1) is integrated on the chip together with the integrated circuit. Said temperature sensor supplies a temperature-dependent measuring signal or at least releases a signal when the chip temperature falls below a particular predetermined value. A special circuit device is provided on the chip for this purpose. Said circuit device enables a current flow to be produced through a structure of electrical conductors (2) that is available. The temperature of the integrated circuit is kept above a predetermined minimum temperature with this current flow.

Abstract translation: 与集成电路一起，温度传感器（1）是集成在芯片上，其提供取决于温度的测量信号，或至少一个发射信号时，芯片的温度低于某一预定值上。 在这种情况下，一种特殊的电路设备存在于芯片上，与通过现有的电导体结构（2）所带来的，与所述集成电路的温度保持在高于预定的最小温度的电流。

公开(公告)号：DE10042383B4

公开(公告)日：2005-04-28

申请号：DE10042383

申请日：2000-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BENEDIX ALEXANDER ,  BARTH ROLAND ,  GROSSE STEPHAN ,  DUEREGGER REINHARD

IPC: G11C11/406 ,  H01L23/58

Abstract: A semiconductor configuration is described and has a temperature sensor, which measures a temperature of a semiconductor module. The measured temperature is provided to a control unit, so that the control unit can adapt a refresh cycle in the semiconductor module to the retention time corresponding to the measured temperature.

公开(公告)号：DE50113270D1

公开(公告)日：2007-12-27

申请号：DE50113270

申请日：2001-07-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BARTH ROLAND ,  BENEDIX ALEXANDER ,  DUEREGGER REINHARD ,  GROSSE STEPHAN

IPC: G11C7/04 ,  H01L27/04 ,  G01K7/01 ,  G11C11/401 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

Abstract: A temperature sensor is integrated together with an integrated circuit on a chip, the sensor delivering a temperature-dependent measuring signal or at least emitting a signal when the chip temperature falls below a specific prescribed value. For such an eventuality, the chip includes a special circuit device thereon, by which a current flow is generated through a provided structure of electrical conductors that keeps the temperature of the integrated circuit above a prescribed minimum temperature.

公开(公告)号：DE102006004851A1

公开(公告)日：2007-08-09

申请号：DE102006004851

申请日：2006-02-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BARTH ROLAND

IPC: G11C11/4074

公开(公告)号：DE10129315A1

公开(公告)日：2003-01-02

申请号：DE10129315

申请日：2001-06-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BENEDIX ALEXANDER ,  BARTH ROLAND ,  HERMANN ROBERT ,  DUEREGGER REINHARD

IPC: G11C7/06 ,  G11C7/14 ,  G11C11/406 ,  G11C11/4091 ,  G11C11/4099 ,  G11C11/404

公开(公告)号：DE10042383A1

公开(公告)日：2002-03-28

申请号：DE10042383

申请日：2000-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BENEDIX ALEXANDER ,  BARTH ROLAND ,  GROSSE STEPHAN ,  DUEREGGER REINHARD

IPC: G11C11/406 ,  H01L23/58

Abstract: A controller (3) subjects a DRAM (2) to refresh cycle at a set refresh time. A temperature sensor (4) measures the temperature of DRAM, based on which the refresh and retention of DRAM are performed. The retention time of DRAM is longer than the refresh time.

公开(公告)号：DE10115291C1

公开(公告)日：2002-10-17

申请号：DE10115291

申请日：2001-03-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BENEDIX ALEXANDER ,  BARTH ROLAND ,  HERMANN ROBERT ,  DUEREGGER REINHARD

IPC: G11C7/06 ,  G11C7/14 ,  G11C11/406 ,  G11C11/4091 ,  G11C11/4099 ,  G11C11/401

Abstract: Memory banks (1-4) each including memory cells (115-117), are connected to the same word line (121). A memory element connected to memory bank, stores an address associated with an activated word lines. A controller (6) is programmed to refresh memory bank by resetting all word lines and to activate one of word lines having the address stored in memory element after refreshing. An Independent claim is included for semiconductor memory operating method.

公开(公告)号：DE10036914A1

公开(公告)日：2002-02-14

申请号：DE10036914

申请日：2000-07-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BENEDIX ALEXANDER ,  BARTH ROLAND ,  GROSSE STEPHAN ,  DUEREGGER REINHARD

IPC: H01L27/04 ,  G01K7/01 ,  G11C7/04 ,  G11C11/401 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L23/58 ,  H01L27/10

Abstract: A temperature sensor (1) is integrated on the chip together with the integrated circuit. Said temperature sensor supplies a temperature-dependent measuring signal or at least releases a signal when the chip temperature falls below a particular predetermined value. A special circuit device is provided on the chip for this purpose. Said circuit device enables a current flow to be produced through a structure of electrical conductors (2) that is available. The temperature of the integrated circuit is kept above a predetermined minimum temperature with this current flow.

公开(公告)号：DE102006008017A1

公开(公告)日：2007-08-30

申请号：DE102006008017

申请日：2006-02-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BARTH ROLAND

IPC: G11C29/44 ,  G11C29/04

Abstract: The method involves installing an integrated semiconductor memory (100), which has multiple state with a memory cell field (10) and a memory cell (SZ) for storage of a data value of a data and a storage circuit (40) for storage of the data bits (QB). The integrated semiconductor memory has a state, if a data value of data registers by a write access in a memory cell. The data value of data stored in the memory cell, which is read by a read access. The operating parameters of an integrated semiconductor memory are located by a write and read access between given multiple threshold values. Independent claims are also included for the following: (1) a method for the operation of an integrated semiconductor memory, involves providing integrated semiconductor memory, which has multiple conditions (2) an integrated semiconductor memory, comprising memory cell field with a memory cell for the storage of a data value and a flip-flop circuit for storage a data bit.

公开(公告)号：DE102005051792A1

公开(公告)日：2007-05-03

申请号：DE102005051792

申请日：2005-10-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BARTH ROLAND ,  GREGORIUS PETER

IPC: G06F12/00

Abstract: The method involves transmitting data between a memory control (200) and interface units (20), which are attached to memory modules (100a,100b,100c). The units (20) are arranged on same side of mechanically detachable connection (10) as the control. The data is transmitted between the units (20) and module over the connection. Clock signals assigned to the data signals are produced in the interface units by a phase servo loop (250). Independent claims are also included for the following: (1) a memory module for a memory device (2) a device for coupling memory module for data transmission to a memory control over the mechanically detachable connection (3) a memory device with the memory control, memory module and the device for coupling memory module for data transmission to a memory control over the mechanically detachable connection.