公开(公告)号：DE10237871B4

公开(公告)日：2011-05-12

申请号：DE10237871

申请日：2002-08-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STOLZE THILO ,  BOETTCHER RICHARD

IPC: H01L23/40 ,  H01L23/12

公开(公告)号：DE102007010883A1

公开(公告)日：2008-09-18

申请号：DE102007010883

申请日：2007-03-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BOETTCHER RICHARD ,  ROBOHM CHRISTIAN ,  SCHILLING OLIVER

IPC: H01L23/055 ,  H01L29/739 ,  H01L29/86

Abstract: Power semiconductor arrangement and method for producing it. One embodiment provides a power semiconductor module. The power semiconductor module has a baseplate with an electrically conductive structure, a housing and a connection element. The connection element is led out from the housing generally perpendicular to the baseplate and is fixed to the housing, has a first connection configured for making contact with the electrically conductive structure, and has a second connection for making electrical contact with a circuit carrier.

公开(公告)号：DE502005007580D1

公开(公告)日：2009-08-06

申请号：DE502005007580

申请日：2005-07-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STOLZE THILO ,  BOETTCHER RICHARD

IPC: H01L23/40

Abstract: A power semiconductor module has a heat-dissipation contact surface ( 16 ) for a thermally conductive connection to a cooling element ( 17 ). The module can be simply, cost-effectively and reliably fixed to the cooling element for the conduction of heat to the latter by at least one pressure element ( 18, 19 ) which is permanently connected to the power semiconductor module. When mounted, the pressure element ( 18 ) presses the heat-dissipation contact surface ( 16 ) against the cooling element ( 17 ).