公开(公告)号：DE102004036142B4

公开(公告)日：2009-04-09

申请号：DE102004036142

申请日：2004-07-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AUERBACH FRANZ ,  ROBOHM CHRISTIAN

IPC: H01L23/485 ,  H01L21/60 ,  H01L23/522

公开(公告)号：DE102007010883A1

公开(公告)日：2008-09-18

申请号：DE102007010883

申请日：2007-03-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BOETTCHER RICHARD ,  ROBOHM CHRISTIAN ,  SCHILLING OLIVER

IPC: H01L23/055 ,  H01L29/739 ,  H01L29/86

Abstract: Power semiconductor arrangement and method for producing it. One embodiment provides a power semiconductor module. The power semiconductor module has a baseplate with an electrically conductive structure, a housing and a connection element. The connection element is led out from the housing generally perpendicular to the baseplate and is fixed to the housing, has a first connection configured for making contact with the electrically conductive structure, and has a second connection for making electrical contact with a circuit carrier.