公开(公告)号：DE10330111A1

公开(公告)日：2004-04-08

申请号：DE10330111

申请日：2003-07-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BOSCH KATHERINE ,  EDMONDS JOHNATHAN ,  HUCKABY JENNIFER FAYE ,  NINO JUN LEONEL R ,  PARTSCH TORSTEN

IPC: G11C11/4072 ,  G11C29/00

Abstract: A method of self-repair for a DRAM integrated circuit includes internally generating a bit pattern and writing the pattern to an array of memory cells within the integrated circuit. The DRAM integrated circuit reads from the array and internally compares the read data with the generated pattern to determine addresses for failed memory cells. The DRAM integrated circuit sets internal soft fuses that record the addresses of the failed memory cells and provide substitute memory cells for the failed memory cells from a redundant memory portion of the array. The self-repair process occurs each time the DRAM integrated circuit is powered up, thus permitting the integrated circuit to adapt to failures when installed in electronic devices and lessening the need for repair during manufacturing.