公开(公告)号：DE10118422A1

公开(公告)日：2002-10-24

申请号：DE10118422

申请日：2001-04-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  BEITEL GERHARD ,  HAUSER ANDREAS ,  BOSK PETER

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/4763

Abstract: Production of a structured metal-containing layer on a semiconductor wafer comprises preparing a wafer with a substrate (1); arranging the metal-containing layer (4) on the substrate; arranging a mask layer (5) on the metal-containing layer; structuring the mask layer and the metal-containing layer; depositing a protective layer (6) on the mask layer and on the substrate; and chemical-mechanical polishing the protective layer and the mask layer, in which the protective layer and the mask layer are removed by an electrode and the electrode is exposed. Preferred Features: A barrier layer is applied to the substrate before applying the electrode. The barrier layer contains titanium or titanium nitride, tantalum or tantalum nitride or tantalum silicon nitride, or iridium or iridium oxide. The electrode contains platinum. The protective layer is made from silicon nitride. The mask layer contains silicon oxide.

公开(公告)号：DE10118422B4

公开(公告)日：2007-07-12

申请号：DE10118422

申请日：2001-04-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  BEITEL GERHARD ,  HAUSER ANDREAS ,  BOSK PETER

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L21/44 ,  H01L21/4763

公开(公告)号：DE10237852A1

公开(公告)日：2003-10-30

申请号：DE10237852

申请日：2002-08-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BOSK PETER

IPC: H01L21/3105 ,  H01L21/316 ,  H01L21/768

Abstract: Process for electrically insulating structured metal layers on a semiconductor substrate comprises applying a high density plasma oxide layer (3) to fill a structured metal layer (2) up to its surface, planarizing the oxide layer using chemical-mechanical polishing selectively on the structured metal layers, and applying a covering oxide layer (5) to cover both the metal layers and the oxide layer.