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公开(公告)号：DE102005046406B4
公开(公告)日：2010-02-25
申请号：DE102005046406
申请日：2005-09-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CHIOZZI GIORGIO
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公开(公告)号：DE10250936B3
公开(公告)日：2004-04-08
申请号：DE10250936
申请日：2002-10-31
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CHIOZZI GIORGIO , PITTASSI RICCARDO , PISELLI MARCO , LOGIUDICE ANDREA
IPC: H03K19/003 , H03K19/0185
Abstract: A level converter for converting high frequency signals comprises coupled transistors and a logic unit (32) with two input connections (K1,K2) which takes up and changes intermediate signals (S1',S2') and produces an output signal (Sout1). The logic unit comprises a signal memory element and a connection circuit having a second signal memory element.
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公开(公告)号：DE602005005060T2
公开(公告)日：2009-06-04
申请号：DE602005005060
申请日：2005-09-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： GLAESER JOACHIM , PICCOLELLA SALVATORE , FLORE ALBERTO , MACRI NICOLA , LENZ MICHAEL , CHIOZZI GIORGIO , GOLA ALBERTO
IPC: B60R21/01 , H03K17/041
Abstract: A power switch circuit for driving an airbag squib module comprises a power transistor (110), a pre-charge capacitance (120) for storing a charge, a charging circuit (140) and a controllable energy-coupling element. The power transistor (110) has a first electrode (E1), a second electrode (E2) and a control electrode. A path between the first electrode (E1) and the second electrode (E2) is connected in series with the airbag squib module (120) between a supply potential (V SUP ) and a reference potential (V REF ). The charging circuit (140) charges the pre-charge capacitance (130) and the charging circuit (140) is therefore coupled with the pre-charged capacitance (130). The controllable energy coupling element (134) is connected between a first electrode of the pre-charge capacitance (130) and the control electrode (control) of the power transistor (110). The inventive power switch exhibits a high degree of stability, allows a fast switching of the power transistor (110) and further comprises an advantageous transient response.
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公开(公告)号：DE602005005060D1
公开(公告)日：2008-04-10
申请号：DE602005005060
申请日：2005-09-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： GLAESER JOACHIM , PICCOLELLA SALVATORE , FLORE ALBERTO , MACRI NICOLA , LENZ MICHAEL , CHIOZZI GIORGIO , GOLA ALBERTO
IPC: B60R21/01 , H03K17/041
Abstract: A power switch circuit for driving an airbag squib module comprises a power transistor (110), a pre-charge capacitance (120) for storing a charge, a charging circuit (140) and a controllable energy-coupling element. The power transistor (110) has a first electrode (E1), a second electrode (E2) and a control electrode. A path between the first electrode (E1) and the second electrode (E2) is connected in series with the airbag squib module (120) between a supply potential (V SUP ) and a reference potential (V REF ). The charging circuit (140) charges the pre-charge capacitance (130) and the charging circuit (140) is therefore coupled with the pre-charged capacitance (130). The controllable energy coupling element (134) is connected between a first electrode of the pre-charge capacitance (130) and the control electrode (control) of the power transistor (110). The inventive power switch exhibits a high degree of stability, allows a fast switching of the power transistor (110) and further comprises an advantageous transient response.
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公开(公告)号：DE102005046406A1
公开(公告)日：2007-04-05
申请号：DE102005046406
申请日：2005-09-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CHIOZZI GIORGIO
Abstract: The device has a semiconductor body (11) and an electrode (12) that is electrically connected with a front side (13) of the semiconductor body and with a current/voltage source. Another electrode (14) is electrically connected with a rear side (15) of the semiconductor body and an electrical load (1). An emitter (19), base (20) and a collector (21) of a transistor formed in the body are controlled by an electrical current flow between the electrodes. A control circuit controls the transistor such that an intensity of the current flow between the electrodes is controlled to a certain value.
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Patent Agency Ranking
公开(公告)号：DE60306165D1
公开(公告)日：2006-07-27
申请号：DE60306165
申请日：2003-09-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BODANO EMANUELE , CHIOZZI GIORGIO , LOGIUDICE ANDREA , PICCOLELLA SALVATORE
Abstract: A regulating system comprising: an input terminal (K10) for applying an input voltage (Vin), an output terminal (K20) for providing an output voltage (Vout) and an output current (Iout), a semiconductor element (Q1) regulating the output voltage (Vout), which element has a load path which is connected between the input terminal (K1) and the output terminal (K2), and a control input to which a regulating signal (Ib1) is applied, a regulating signal generation circuit to generate the regulating signal (Ib1), which circuit has a current mirror arrangement (Q2, Q3) including a first and second current mirror path, wherein a controlled current source (Q4) is connected in series to the first current mirror path, which source induces a first current dependent on one of the output signals (Vout) in the first current mirror path, and wherein a second current (12) through the second current mirror path is dependent on the first current (I1), a splitter circuit (20) which conducts the second current (I2) to the output terminal (K2) or to a reference potential (GND), dependent on a load path voltage (Vec1) applied over the load path of the semiconductor element (Q1).
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公开(公告)号：DE602006004023D1
公开(公告)日：2009-01-15
申请号：DE602006004023
申请日：2006-05-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CAPODIVACCA GIOVANNI , CHIOZZI GIORGIO
Abstract: The invention relates to a method of determining a resonance frequency interval containing the resonance frequency of a rechargeable battery, comprising the method steps: - Applying of periodic current or voltage signals of different frequencies in succession to a battery cell of the battery, - Measuring of the temperatures of the battery cell occurring for the different frequencies, - Comparing of the temperatures, and subsequent selection of an initial frequency of the different frequencies as a first interval value of the resonance frequency interval and a second frequency of the different frequencies as a second interval value of the resonance frequency interval based on the comparison of the temperatures.
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公开(公告)号：DE602004006623T2
公开(公告)日：2008-01-17
申请号：DE602004006623
申请日：2004-08-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BERNACCHIA GIUSEPPE , CHIOZZI GIORGIO , CAPODIVACCA GIOVANNI
Abstract: A control circuit for a switch element (T1) in a switching mode converter, used to convert an input voltage (Vin) into an output voltage (Vout). The circuit comprises: a pulse width modulator circuit (13), configurated so as to provide a pulse-width-modulated actuating signal (S1) for the switch element (T1) depending on a regulating signal (S14) dependent on the output voltage (Vout) and a current measurement signal (Vc) dependent on a current through an inductive storage element (Lout), an arrangement (20) that provides the current measurement signal (Vc), wherein the arrangement (20) for providing the current measurement signal is a measuring and regulating arrangement, configured so as to simulate the current measurement signal (Vc) from a signal dependent on the output voltage (Vout), a signal dependent on the difference between the input voltage (Vin) and the output voltage (Vout), and at least a first sampled value of a signal (Vs) proportional to the current (Iout) across the inductive storage element (Lout) during a period of the pulse-width-modulated actuating signal (S1).
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公开(公告)号：DE602004006623D1
公开(公告)日：2007-07-05
申请号：DE602004006623
申请日：2004-08-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BERNACCHIA GIUSEPPE , CHIOZZI GIORGIO , CAPODIVACCA GIOVANNI
Abstract: A control circuit for a switch element (T1) in a switching mode converter, used to convert an input voltage (Vin) into an output voltage (Vout). The circuit comprises: a pulse width modulator circuit (13), configurated so as to provide a pulse-width-modulated actuating signal (S1) for the switch element (T1) depending on a regulating signal (S14) dependent on the output voltage (Vout) and a current measurement signal (Vc) dependent on a current through an inductive storage element (Lout), an arrangement (20) that provides the current measurement signal (Vc), wherein the arrangement (20) for providing the current measurement signal is a measuring and regulating arrangement, configured so as to simulate the current measurement signal (Vc) from a signal dependent on the output voltage (Vout), a signal dependent on the difference between the input voltage (Vin) and the output voltage (Vout), and at least a first sampled value of a signal (Vs) proportional to the current (Iout) across the inductive storage element (Lout) during a period of the pulse-width-modulated actuating signal (S1).
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公开(公告)号：DE60306165T2
公开(公告)日：2007-04-19
申请号：DE60306165
申请日：2003-09-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： BODANO EMANUELE , CHIOZZI GIORGIO , LOGIUDICE ANDREA , PICCOLELLA SALVATORE
Abstract: A regulating system comprising: an input terminal (K10) for applying an input voltage (Vin), an output terminal (K20) for providing an output voltage (Vout) and an output current (Iout), a semiconductor element (Q1) regulating the output voltage (Vout), which element has a load path which is connected between the input terminal (K1) and the output terminal (K2), and a control input to which a regulating signal (Ib1) is applied, a regulating signal generation circuit to generate the regulating signal (Ib1), which circuit has a current mirror arrangement (Q2, Q3) including a first and second current mirror path, wherein a controlled current source (Q4) is connected in series to the first current mirror path, which source induces a first current dependent on one of the output signals (Vout) in the first current mirror path, and wherein a second current (12) through the second current mirror path is dependent on the first current (I1), a splitter circuit (20) which conducts the second current (I2) to the output terminal (K2) or to a reference potential (GND), dependent on a load path voltage (Vec1) applied over the load path of the semiconductor element (Q1).
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