公开(公告)号：DE10034942B4

公开(公告)日：2004-08-05

申请号：DE10034942

申请日：2000-07-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： CURELLO GUISEPPE ,  FAUL JUERGEN

IPC: H01L21/20 ,  H01L21/74 ,  H01L21/8238 ,  H01L29/36 ,  H01L21/324

Abstract: A process is described which allows a buried, retrograde doping profile or a delta doping to be produced in a relatively simple and inexpensive way. The process uses individual process steps that are already used in the mass production of integrated circuits and accordingly can be configured for a high throughput.

公开(公告)号：DE10014916C2

公开(公告)日：2002-01-24

申请号：DE10014916

申请日：2000-03-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WURZER HELMUT ,  CURELLO GUISEPPE

IPC: H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L21/336

公开(公告)号：DE10014916A1

公开(公告)日：2001-10-04

申请号：DE10014916

申请日：2000-03-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WURZER HELMUT ,  CURELLO GUISEPPE

IPC: H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L21/336

Abstract: Adjusting the threshold voltage of an MOS transistor having a polycrystalline silicon gate (4) comprises implanting germanium ions into the gate to change the electron affinity of the gate. Preferred Features: The process further comprises curing the gate implanted with the germanium ions by heat treatment whilst it is subjected to a high temperature for a predetermined period of time. Nitrogen ions are implanted into the gate to form an oxidation barrier layer (3) before the germanium ions are implanted.

公开(公告)号：DE10034942A1

公开(公告)日：2002-01-31

申请号：DE10034942

申请日：2000-07-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： CURELLO GUISEPPE ,  FAUL JUERGEN

IPC: H01L21/20 ,  H01L21/74 ,  H01L21/8238 ,  H01L29/36 ,  H01L21/324

Abstract: A process is described which allows a buried, retrograde doping profile or a delta doping to be produced in a relatively simple and inexpensive way. The process uses individual process steps that are already used in the mass production of integrated circuits and accordingly can be configured for a high throughput.