公开(公告)号：WO02052634A3

公开(公告)日：2003-05-30

申请号：PCT/DE0104903

申请日：2001-12-27

Applicant: INFINEON TECHNOLOGIES AG ,  DICKENSCHEID WOLFGANG ,  MEYER FRANK ,  DELAGE STEPHANIE ,  SPRINGER GOETZ

Inventor： DICKENSCHEID WOLFGANG ,  MEYER FRANK ,  DELAGE STEPHANIE ,  SPRINGER GOETZ

IPC: B24B37/04 ,  B24B51/00 ,  H01L21/304 ,  H01L21/66 ,  B24B49/00

CPC classification number: B24B51/00 ,  B24B37/042

Abstract: The invention relates to a method for characterising and simulating a CMP process, according to which a substrate to be polished, in particular a semiconductor wafer is pressed onto a polishing cloth and rotated in relation to the latter for a specified polishing period. Said method comprises the following steps: a) determination of a set of process parameters, in particular of the contact force and the relative rotational speed of the substrate and the polishing cloth; b) provision and characterisation of a test substrate comprising test patterns with different structural thicknesses for the specified process parameters; c) determination of a set of model parameters for simulating the CMP process from the results of the characterisation of the test substrate; d) determination of layout parameters of the substrate to be polished; e) determination of a requirement profile relative to the CMP process result for the substrate to be polished; and f) simulation of the CMP processes for determining the polishing period necessary to fulfil the requirement profile. The invention also relates to a method for operating a test device for semiconductor components.

Abstract translation: 一种用于在CMP过程中，待抛光的基片的特性和模拟方法，尤其是半导体晶片，压在抛光布和相对其旋转了预定抛光时间，包括以下步骤：a）指定一组的工艺参数，尤其是 接触压力和底物的相对旋转速度和抛光布的，b）提供和表征与在指定的过程参数具有不同图案密度的测试图案的测试基板; c）确定一组用于从所述测试基板的表征结果的CMP工艺的仿真模型参数; d）确定所述布局的参数要抛光的衬底; e）建立用于为基材，以被研磨CMP处理结果的要求配置; 和f）模拟所述CMP过程来确定所需的Anforderungsprofls抛光时间的性能。 用于半导体器件操作的测试装置的方法。

公开(公告)号：DE10245636A1

公开(公告)日：2003-09-25

申请号：DE10245636

申请日：2002-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KERSCH ALFRED ,  BAUMGARTL JOHANNES ,  DELAGE STEPHANIE

IPC: B24B37/04 ,  H01L21/302

Abstract: A chemical mechanical polishing process rotates a wafer having an alignment mark at a wafer rotation rate and a polishing surface at an off-matched rotation rate. The wafer rotation rate and the off-matched rotation rate are not equal. The wafer rotating at the wafer rotation rate and the polishing surface rotating at the off-matched rotation rate touch to polish a plurality of points on the wafer. The rotation of the wafer rotating at the wafer rotation rate is adjusted with respect to the polishing surface rotating at the off-matched rotation rate to achieve an approximately zero averaged rotation rate velocity for each of the points on the wafer with respect to the polishing surface polishing the wafer upon a completion of the total polishing time.