公开(公告)号：JP2007172821A

公开(公告)日：2007-07-05

申请号：JP2006343948

申请日：2006-12-21

Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

Inventor： GUNTHER LEHMANN ,  DIEL MICHAEL ,  DI RONZA MARIO

IPC: G11C17/14

CPC classification number: G11C17/18 ,  G11C5/14

Abstract: PROBLEM TO BE SOLVED: To provide a fuse memory element in which power consumption is reduced. SOLUTION: A memory device (200) is provided with nonvolatile memory elements (211, 221, 231), readout circuits (212, 222, 232) for reading out memory information items stored in this memory elements (211, 221, 231), switching units (240) applying supply power source voltage (VDD_global) to the read-out circuits (212, 222, 232), and a control unit (241) controlling the switching units (240) by a method in accordance with the memory information stored in the memory elements (211, 221, 231). COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供功耗降低的熔丝存储元件。 存储器件（200）具有非易失性存储元件（211,221,231），用于读出存储在该存储器元件（211,221,221）中的存储器信息项的读出电路（212,222,232） 231），将电源电压（VDD_global）施加到读出电路（212,222,232）的开关单元（240）和控制单元（241），控制单元（241）通过根据 所述存储器信息存储在所述存储元件（211,221,231）中。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：DE102005061719B3

公开(公告)日：2007-05-16

申请号：DE102005061719

申请日：2005-12-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEHMANN GUNTHER ,  DIEL MICHAEL ,  DI RONZA MARIO

IPC: G11C17/14 ,  G11C7/10

Abstract: The device has a set of non-volatile memory units (211, 221, 231), and reading circuits (212, 222, 232) provided for reading memory information stored in the memory units. A switch (240) is provided for supplying the reading circuits with a supply voltage. A control unit (241) is connected between the reading circuits and a positive potential or a negative potential or both terminals of the supply voltage. The control unit controls the switch based on the information stored in the memory units, such that the switch separates the reading circuits from the supply voltage.. An independent claim is also included for a method for operating a memory device.