公开(公告)号：DE102004025112A1

公开(公告)日：2005-12-22

申请号：DE102004025112

申请日：2004-05-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRAM ANDREAS ,  ECKART UDO ,  SACHSE HERMANN ,  FAUL JUERGEN

IPC: H01L21/027 ,  H01L21/265 ,  H01L21/266 ,  H01L21/336 ,  H01L21/762 ,  H01L29/10

Abstract: Process for implanting a semiconductor wafer comprises preparing the wafer (5) with a substrate (10), applying a resist layer (24) on the surface of the substrate, structuring the resist layer to expose the surface of the substrate above a first region (12), implanting ions having a first energy, applying an anti-reflection covering layer (22) over the resist layer and implanting ions of a second energy.

公开(公告)号：DE102004025112B4

公开(公告)日：2008-04-10

申请号：DE102004025112

申请日：2004-05-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRAM ANDREAS ,  ECKART UDO ,  SACHSE HERMANN ,  FAUL JUERGEN

IPC: H01L21/336 ,  H01L21/027 ,  H01L21/265 ,  H01L21/266 ,  H01L21/762 ,  H01L29/10 ,  H01L29/78