公开(公告)号：DE10161953A1

公开(公告)日：2003-06-26

申请号：DE10161953

申请日：2001-12-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WITTMANN REINHARD ,  KOLB STEFAN ,  EICKHOFF MARTIN

IPC: B81B3/00 ,  G01J5/20 ,  G01P15/08 ,  B81C1/00

Abstract: Production of a microstructure comprises: preparing a raw structure consisting of a sacrificial layer (2) arranged between a structured layer (3) and a substrate (1); inserting a spacer (7) between the structured layer and the substrate; removing the sacrificial layer so that the spacer partially remains; and removing the spacer by dry etching. Preferred Features: The spacer is made from a nitride material. The spacer is inserted by producing a recess in the sacrificial layer. The sacrificial layer is removed by wet chemical etching. The thickness and the geometry of the spacer is selected so that it remains during removal of the sacrificial layer by wet chemical etching.