公开(公告)号：DE10002363B4

公开(公告)日：2005-02-03

申请号：DE10002363

申请日：2000-01-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAIER-SCHNEIDER DIETER ,  WITTMANN REINHARD

IPC: B81B3/00 ,  B81C1/00

公开(公告)号：DE10063991B4

公开(公告)日：2005-06-02

申请号：DE10063991

申请日：2000-12-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PUSCH CATHARINA ,  WITTMANN REINHARD ,  FRANOSCH MARTIN

IPC: B81B3/00 ,  B81C1/00

Abstract: A method for the manufacture of micro-mechanical components from a stack of layers having at least a substrate, a sacrificial layer and a layer which is to be undercut includes forming at least one etch hole in the layer, which is to be undercut, and providing at least one passivation layer for controlling a selective depositing of a cover material which closes each of the etch holes after a step of etching the sacrificial layer. The passivation layer makes it possible that the undercut layer elements do not become excessively thick or grow together with the substrate due to the deposition of the cover material.

公开(公告)号：DE10310716A1

公开(公告)日：2004-07-15

申请号：DE10310716

申请日：2003-03-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OFFENBERG DIRK ,  BIEMER JUSTIN ,  BOUISSOU AUDE ,  DOW TIM ,  NOTZ REINER ,  PLAGMANN JOERN ,  RUDNICK WOLFRAM ,  SCHEINBACHER GUENTHER ,  SPINDLER OSWALD ,  WITTMANN REINHARD

IPC: H01L23/544

Abstract: The method involves forming a first metal layer (3) on a semiconductor wafer surface (2), forming structural elements (4), covering free areas with an insulating layer (6). Further metal layers, structural elements and insulating layers are then formed. A fourth insulating layer (16) is applied directly to the surface of a third insulating layer (13).

公开(公告)号：DE10161953A1

公开(公告)日：2003-06-26

申请号：DE10161953

申请日：2001-12-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WITTMANN REINHARD ,  KOLB STEFAN ,  EICKHOFF MARTIN

IPC: B81B3/00 ,  G01J5/20 ,  G01P15/08 ,  B81C1/00

Abstract: Production of a microstructure comprises: preparing a raw structure consisting of a sacrificial layer (2) arranged between a structured layer (3) and a substrate (1); inserting a spacer (7) between the structured layer and the substrate; removing the sacrificial layer so that the spacer partially remains; and removing the spacer by dry etching. Preferred Features: The spacer is made from a nitride material. The spacer is inserted by producing a recess in the sacrificial layer. The sacrificial layer is removed by wet chemical etching. The thickness and the geometry of the spacer is selected so that it remains during removal of the sacrificial layer by wet chemical etching.

公开(公告)号：DE10310716B4

公开(公告)日：2005-07-28

申请号：DE10310716

申请日：2003-03-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OFFENBERG DIRK ,  BIEMER JUSTIN ,  BOUISSOU AUDE ,  DOW TIM ,  NOTZ REINER ,  PLAGMANN JOERN ,  RUDNICK WOLFRAM ,  SCHEINBACHER GUENTHER ,  SPINDLER OSWALD ,  WITTMANN REINHARD

IPC: H01L23/544

公开(公告)号：DE10063991A1

公开(公告)日：2002-07-04

申请号：DE10063991

申请日：2000-12-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PUSCH CATHARINA ,  WITTMANN REINHARD ,  FRANOSCH MARTIN

IPC: B81B3/00 ,  B81C1/00

Abstract: A method for the manufacture of micro-mechanical components from a stack of layers having at least a substrate, a sacrificial layer and a layer which is to be undercut includes forming at least one etch hole in the layer, which is to be undercut, and providing at least one passivation layer for controlling a selective depositing of a cover material which closes each of the etch holes after a step of etching the sacrificial layer. The passivation layer makes it possible that the undercut layer elements do not become excessively thick or grow together with the substrate due to the deposition of the cover material.

公开(公告)号：DE10002363A1

公开(公告)日：2001-08-02

申请号：DE10002363

申请日：2000-01-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAIER-SCHNEIDER DIETER ,  WITTMANN REINHARD

IPC: B81B3/00 ,  B81C1/00

Abstract: Production of a micromechanical structure comprises applying a sacrificial layer (2) to a base body (1); forming a covering layer (3) over the sacrificial layer; forming a reinforcing layer (5) over the covering layer; partially removing the sacrificial layer; and removing the reinforcing layer. Preferred Features: The reinforcing layer acts as a masking layer when the sacrificial layer is removed. The reinforcing layer is a photolaquer which is hardened by irradiating with UV or heat treatment.