公开(公告)号：DE102004041554B4

公开(公告)日：2006-11-30

申请号：DE102004041554

申请日：2004-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： EISELE IGNAZ ,  SCHULZE JOERG

IPC: H01L21/336

公开(公告)号：DE102004041554A1

公开(公告)日：2006-03-02

申请号：DE102004041554

申请日：2004-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： EISELE IGNAZ ,  SCHULZE JOERG

IPC: H01L21/336

Abstract: Production of a vertical MOS transistor comprises epitaxially depositing an intrinsic sacrificial layer (4) made from Si1-xGex on a silicon substrate (1), depositing a high doped silicon layer (3) on the sacrificial layer, anisotropically etching a mesa structure including silicon regions (2, 3) and the sacrificial layer, growing an intrinsic silicon film (5) on the mesa structure, forming a MOS gate electrode (6, 7) by depositing over the intrinsic silicon film and etching to form an opening (9) in the mesa structure.

公开(公告)号：DE102004015307A1

公开(公告)日：2005-10-20

申请号：DE102004015307

申请日：2004-03-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： EISELE IGNAZ ,  SCHULZE JOERG ,  LUDSTECK ALEXANDRA ,  STIMPEL TANJA

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/302 ,  H01L21/324 ,  H01L29/51

Abstract: Preparing the surface (3) of a semiconductor body (1) for subsequent treatment comprises carrying out a temperature jump before treating in a specific atmosphere so that carbon can be burned away from the surface. Preferred Features: The specific atmosphere contains oxygen, preferably atomic oxygen, ozone or a gas which releases atomic oxygen or ozone. The temperature jump is carried out at 400-500 [deg] C. The surface is cleaned before the temperature jump.

公开(公告)号：DE19621244C2

公开(公告)日：2003-08-28

申请号：DE19621244

申请日：1996-05-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： EISELE IGNAZ ,  KAESEN FLORIAN

IPC: H01L21/3105 ,  H01L21/336 ,  H01L29/78 ,  H01L29/423

公开(公告)号：DE102004041554B8

公开(公告)日：2007-03-08

申请号：DE102004041554

申请日：2004-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： EISELE IGNAZ ,  SCHULZE JOERG

IPC: H01L21/336

公开(公告)号：DE10061529A1

公开(公告)日：2002-06-27

申请号：DE10061529

申请日：2000-12-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FINK CHRISTOPH ,  HANSCH WALTER ,  EISELE IGNAZ ,  WERNER WOLFGANG

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/36 ,  H01L29/78

Abstract: Semiconductor component arranged in a semiconductor body comprises a source zone (4) and a drain zone (5) both having first conductivity; a body zone (8) of second conductivity arranged between the source and drain zones; and a gate electrode (11) insulated from the semiconductor body via a dielectric (10). Regions (12', 12'', 13) in a channel zone (12) of the body zone are provided with second conductivity, the first region (13) having a doping concentration which is lower than that of the second region (12', 12''). The combination of the regions produces a threshold voltage of the component which is larger than zero. An Independent claim is also included for a process for the production of a doping layer in a vertical semiconductor component comprising applying an epitaxial layer on a semiconductor body using thermal deposition; interrupting the thermal deposition; vaporizing a thin doping layer of second conductivity after cooling the semiconductor body; and applying a further epitaxial layer to the doping layer.