公开(公告)号：DE10061529A1

公开(公告)日：2002-06-27

申请号：DE10061529

申请日：2000-12-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FINK CHRISTOPH ,  HANSCH WALTER ,  EISELE IGNAZ ,  WERNER WOLFGANG

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/36 ,  H01L29/78

Abstract: Semiconductor component arranged in a semiconductor body comprises a source zone (4) and a drain zone (5) both having first conductivity; a body zone (8) of second conductivity arranged between the source and drain zones; and a gate electrode (11) insulated from the semiconductor body via a dielectric (10). Regions (12', 12'', 13) in a channel zone (12) of the body zone are provided with second conductivity, the first region (13) having a doping concentration which is lower than that of the second region (12', 12''). The combination of the regions produces a threshold voltage of the component which is larger than zero. An Independent claim is also included for a process for the production of a doping layer in a vertical semiconductor component comprising applying an epitaxial layer on a semiconductor body using thermal deposition; interrupting the thermal deposition; vaporizing a thin doping layer of second conductivity after cooling the semiconductor body; and applying a further epitaxial layer to the doping layer.