公开(公告)号：DE19640238B4

公开(公告)日：2005-04-14

申请号：DE19640238

申请日：1996-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ESPEJO-MAZURE CARLOS ,  SCHINDLER GUENTHER ,  HARTNER WALTER

IPC: H01L27/115 ,  H01L27/11502 ,  H01L27/105 ,  H01L21/8239

公开(公告)号：DE19639899B4

公开(公告)日：2005-07-07

申请号：DE19639899

申请日：1996-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ESPEJO-MAZURE CARLOS ,  SCHINDLER GUENTHER ,  HARTNER WALTER

IPC: H01L21/8242 ,  H01L27/108

Abstract: The invention concerns a storage arrangement (1) which consists of identical storage cells and comprises storage capacitors which are disposed above the selection transistors and whose first electrodes (14) are strip-shaped and disposed perpendicularly on a first main surface (2). The surfaces of the first electrodes (14) and hence the capacitor surfaces can be varied, for example, by varying the heights of the first electrodes (14) or, when the cell surfaces (5) are sensibly arranged, by overlapping cell surfaces (5) adjacent the first electrodes (14).